High Current Gain Silicon NPN Transistor JSMSEMI 2N3055 Designed for Switching and Amplifier Applications
Key Attributes
Model Number:
2N3055
Product Custom Attributes
Current - Collector Cutoff:
700uA
Emitter-Base Voltage(Vebo):
7V
Pd - Power Dissipation:
115W
Transition Frequency(fT):
2.5MHz
Type:
NPN
Current - Collector(Ic):
15A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-65℃~+150℃@(Tj)
Mfr. Part #:
2N3055
Package:
TO-3
Product Description
Product Overview
The JSMICRO Semiconductor 2N3055 is a Silicon NPN Power Transistor designed for general-purpose switching and amplifier applications. It offers an excellent Safe Operating Area, a DC Current Gain (hFE) of 20-70 at IC = 4A, and a Collector-Emitter Saturation Voltage (VCE(sat)) of 1.1V (Max) at IC = 4A. It is a complement to the 2N2955 type.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: 2N3055
- Material: Silicon NPN
- Origin: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC=200mA ; IB=0 | 60 | V | |
| VCER(SUS) | Collector-Emitter Sustaining Voltage | IC=200mA ; RBE=100 | 70 | V | |
| VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= 4A; IB= 0.4A | 1.1 | V | |
| VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= 10A; IB= 3.3A | 3.0 | V | |
| VBE(on) | Base-Emitter On Voltage | IC= 4A ; VCE= 4V | 1.5 | V | |
| ICEO | Collector Cutoff Current | VCE= 30V; IB=0 | 0.7 | mA | |
| ICEX | Collector Cutoff Current | VCE= 100V; VBE(off)= 1.5V | 1.0 | mA | |
| ICEX | Collector Cutoff Current | VCE= 100V; VBE(off)= 1.5V,TC=150 | 5.0 | mA | |
| IEBO | Emitter Cutoff Current | VEB= 7.0V; IC=0 | 5.0 | mA | |
| hFE-1 | DC Current Gain | IC= 4A ; VCE= 4V | 20 | 70 | |
| hFE-2 | DC Current Gain | IC= 10A ; VCE= 4V | 5.0 | ||
| Is/b | Second Breakdown Collector Current with Base Forward Biased | VCE= 40V,t= 1.0s,Nonrepetitive | 2.87 | A | |
| fT | Current Gain-Bandwidth Product | IC= 0.5A ; VCE= 10V;f=1.0MHz | 2.5 | MHz | |
| VCBO | Collector-Base Voltage | 100 | V | ||
| VCER | Collector-Emitter Voltage | 70 | V | ||
| VCEO | Collector-Emitter Voltage | 60 | V | ||
| VEBO | Emitter-Base Voltage | 7 | V | ||
| IC | Collector Current-Continuous | 15 | A | ||
| IB | Base Current | 7 | A | ||
| PC | Collector Power Dissipation@TC=25 | 115 | W | ||
| TJ | Junction Temperature | 200 | |||
| Tstg | Storage Temperature | -65 | 200 | ||
| Rth j-c | Thermal Resistance,Junction to Case | 1.52 | /W |
2401051646_JSMSEMI-2N3055_C2848354.pdf
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