Power Dissipation 0625 Watt PNP Epitaxial Silicon Transistor JSMSEMI S9012 with 05 Amp Collector Current

Key Attributes
Model Number: S9012
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
625mW
Transition Frequency(fT):
150MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S9012
Package:
TO-92
Product Description

Product Overview

The JSMICRO Semiconductor S9012 is a PNP Epitaxial Silicon Transistor designed for general-purpose applications. It offers features such as a power dissipation of 0.625 W and a collector current of -0.5 A, making it suitable for various electronic circuits.

Product Attributes

  • Brand: JSMICRO Semiconductor
  • Model: S9012
  • Type: PNP Epitaxial Silicon Transistor
  • Origin: Not specified
  • Material: Silicon
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolTest ConditionsMINTYPMAXUNIT
Power DissipationPCMTamb=25℃0.625W
Collector CurrentICM-0.5A
Collector-Base VoltageV(BR)CBO-40V
Operating and Storage Junction Temperature RangeTj, Tstg-55+150
Collector-Base Breakdown VoltageV(BR)CBOIC= -100µA, IE=0-40V
Collector-Emitter Breakdown VoltageV(BR)CEOIC= -1 mA, IB=0-25V
Emitter-Base Breakdown VoltageV(BR)EBOIE= -100µA, IC=0-5V
Collector Cut-off CurrentICBOVCB=- 40V, IE=0-0.1µA
Collector Cut-off CurrentICBOVCB=-20V, IE=0-0.1µA
Emitter Cut-off CurrentIEBOVEB=- 5V, IC=0-0.1µA
DC Current GainhFE(1)VCE=-1V, IC=-50mA64300
DC Current GainhFE(2)VCE=-1V, IC= -500mA40
Collector-Emitter Saturation VoltageVCE(sat)IC= -500 mA, IB= -50mA-0.6V
Base-Emitter VoltageVBE(sat)IC= -500 mA, IB=- 50mA-1.2V
Transition FrequencyfTVCE=-6V,IC=-20mA, f=30MHz150MHz

2401051655_JSMSEMI-S9012_C2931496.pdf

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