Low frequency power amplifier transistor JSMSEMI 2SD667A featuring DC current gain and voltage specs
Key Attributes
Model Number:
2SD667A
Product Custom Attributes
Current - Collector Cutoff:
10uA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
900mW
Transition Frequency(fT):
140MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
100V
Mfr. Part #:
2SD667A
Package:
TO-92L
Product Description
Product Overview
The 2SD667/A is a low frequency power amplifier designed as a complementary pair with the 2SB647/A. It offers robust performance with high breakdown voltages and reliable DC current gain characteristics.
Product Attributes
- Brand: JSMICRO Semiconductor
- Product Type: Transistor (NPN)
- Package: TO-92
Technical Specifications
| Model | Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| 2SD667/A | Collector-base breakdown voltage | V(BR)CBO | IC=10A,IE=0 | 120 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA,IB=0 | 80/100 | V | |||
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A,IC=0 | 5 | V | |||
| Collector cut-off current | ICBO | VCB=100V,IE=0 | 10 | A | |||
| Emitter cut-off current | IEBO | VEB=4V,IC=0 | 10 | A | |||
| DC current gain | hFE(1) | VCE=5V,IC=150mA | 60 | 320 | |||
| DC current gain | hFE(2) | VCE=5V,IC=500mA | 30 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=500mA,IB=50mA | 1 | V | |||
| Base-emitter voltage | VBE | VCE=5V,IC=150mA | 1.5 | V | |||
| 2SD667 | DC current gain (hFE(1)) | hFE(1) | VCE=5V,IC=150mA | 60 | 120/200/320 | ||
| Classification of hFE(1) | Rank B | VCE=5V,IC=150mA | 60 | 120 | |||
| Classification of hFE(1) | Rank C | VCE=5V,IC=150mA | 100 | 200 | |||
| 2SD667A | DC current gain (hFE(1)) | hFE(1) | VCE=5V,IC=150mA | 60 | 120/200/320 | ||
| Classification of hFE(1) | Rank B | VCE=5V,IC=150mA | 60 | 120 | |||
| Classification of hFE(1) | Rank C | VCE=5V,IC=150mA | 100 | 200 | |||
| 2SD667, 2SD667A | Transition frequency | fT | VCE=5V,IC=150mA | 140 | MHz | ||
| 2SD667, 2SD667A | Collector output capacitance | Cob | VCB=10V,IE=0,f=1MHz | 12 | pF | ||
| 2SD667, 2SD667A | Collector Power Dissipation | PC | 900 | mW | |||
| 2SD667, 2SD667A | Junction Temperature | TJ | 150 | ||||
| 2SD667, 2SD667A | Storage Temperature | Tstg | -55 | 150 | |||
| 2SD667, 2SD667A | Thermal Resistance Junction to Ambient | RJA | 139 | /W |
2401051657_JSMSEMI-2SD667A_C5356107.pdf
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