Surface mount N Channel transistor JSCJ CJBB3134K featuring low RDS on resistance and ESD protection
Key Attributes
Model Number:
CJBB3134K
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
900mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
350mV
Reverse Transfer Capacitance (Crss@Vds):
15pF@16V
Number:
1 N-channel
Input Capacitance(Ciss):
120pF@16V
Pd - Power Dissipation:
100mW
Mfr. Part #:
CJBB3134K
Package:
DFN-3(1x0.6)
Product Description
Product Overview
The CJBB3134K is an N-Channel MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, featuring a low RDS(on) and operated at low logic level gate drive. Encased in a surface mount DFN1006-3L-A package, this ESD protected gate device is ideal for load/power switching, interfacing switching, battery management for ultra-small portable electronics, and logic level shifts.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Name: CJBB3134K
- Package: DFN1006-3L-A
- Channel Type: N-Channel
- Material: Plastic-Encapsulate
- Lead Free: Yes
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =20V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 20 | A | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.35 | 0.75 | 1.1 | V |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =150mA | 250 | 500 | m | |
| VGS =2.5V, ID =150mA | 300 | 700 | ||||
| VGS =1.8V, ID =150mA | 370 | 900 | ||||
| Input Capacitance | Ciss | VDS=16V,VGS=0V,f=1MHz | 79 | 120 | pF | |
| Output Capacitance | Coss | VDS=16V,VGS=0V,f=1MHz | 13 | 20 | ||
| Reverse Transfer Capacitance | Crss | VDS=16V,VGS=0V,f=1MHz | 9 | 15 | ||
| Turn-on delay time | td(on) | VDS=10V,ID=500mA, VGS=4.5V,RG=10 | 6.7 | ns | ||
| Turn-on rise time | tr | VDS=10V,ID=500mA, VGS=4.5V,RG=10 | 4.8 | |||
| Turn-off delay time | td(off) | VDS=10V,ID=500mA, VGS=4.5V,RG=10 | 17.3 | |||
| Turn-off fall time | tf | VDS=10V,ID=500mA, VGS=4.5V,RG=10 | 7.4 | |||
| Diode Forward voltage | VSD | IS=0.15A, VGS = 0V | 1.2 | V |
2411121115_JSCJ-CJBB3134K_C504102.pdf
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