Power MOSFET JSCJ CJAC10TH10 N Channel Device with PQFNWB56 8L Package and Solid Dot Pin 1 Indicator
Key Attributes
Model Number:
CJAC10TH10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
12pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
3.95nF@50V
Pd - Power Dissipation:
100W
Gate Charge(Qg):
43.3nC@10V
Mfr. Part #:
CJAC10TH10
Package:
PQFNWB-8L(5x6)
Product Description
Product Overview
The CJAC10TH10 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing shielded gate trench technology for excellent RDS(ON) and low gate charge. This design enables high efficiency in power supply applications and is suitable for use as a secondary synchronous rectifier.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAC10TH10
- Package: PQFNWB56-8L
- Marking: CJAC10TH10
- Pin 1 Indicator: Solid dot
- Date Code: XX
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | (Tc=25) | 100 | A | ||
| Pulsed Drain Current | IDM | (1) | 300 | A | ||
| Maximum Power Dissipation | PD | (Tc=25) | 100 | W | ||
| Avalanche energy | EAS | * | 130 | mJ | ||
| Thermal Resistance Junction to Ambient | RJA | (3) | 42 | /W | ||
| Thermal Resistance Junction to Case | RJC | 1.25 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55~ +150 | ||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 100 | V | ||
| Zero gate voltage drain current | IDSS | VDS =100V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±20V, VDS = 0V | ±100 | nA | ||
| Gate threshold voltage | VGS(th) | (1) VDS =VGS, ID =250A | 1.0 | 2.5 | V | |
| Drain-source on-resistance | RDS(on) | (1) VGS =10V, ID =12A | 5.8 | 8.0 | mΩ | |
| Drain-source on-resistance | RDS(on) | (1) VGS =4.5V, ID =9A | 8.5 | 10.0 | mΩ | |
| Total gate charge | Qg | (2) VDS =50V,VGS =10V,ID =10A | 43.3 | nC | ||
| Gate-source charge | Qgs | (2) | 5.6 | nC | ||
| Gate-drain charge | Qg | (2) | 12.4 | nC | ||
| Input Capacitance | Ciss | (2) VDS =50V,VGS =0V,f =1MHz | 3950 | pF | ||
| Output Capacitance | Coss | (2) | 521 | pF | ||
| Reverse Transfer Capacitance | Crss | (2) | 12 | pF | ||
| Turn-on delay time | td(on) | (2) VGS=10V, VDS=50V, RG=2Ω, ID=10A | 21.4 | ns | ||
| Turn-on rise time | tr | (2) | 8.7 | ns | ||
| Turn-off delay time | td(off) | (2) | 68.4 | ns | ||
| Turn-off fall time | tf | (2) | 43.2 | ns | ||
| Body diode voltage | VSD | (1) IS=30A,VGS=0V | 1.3 | V | ||
| Reverse recovery time | Trr | (1) VR=50V,IS=10A,di/dt=100A/µs | 68 | ns | ||
| Reverse recovery charge | Qrr | (1) VR=50V,IS=10A,di/dt=100A/µs | 160 | nC |
2411121115_JSCJ-CJAC10TH10_C504079.pdf
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