NPN transistor JSMSEMI MPS2222A suitable for switching amplification and general electronic circuits
Key Attributes
Model Number:
MPS2222A
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
10nA
Pd - Power Dissipation:
625mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MPS2222A
Package:
TO-92
Product Description
Product Overview
The MPS2222A is a general-purpose NPN silicon transistor designed for various electronic applications. It offers complementary PNP type availability with the MPS2907A. This transistor is suitable for switching and amplification circuits.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: MPS2222A
- Complementary Type: MPS2907A
- Material: Silicon
- Package: TO-92
Technical Specifications
| Parameter | Symbol | Test Conditions | MIN | MAX | Units |
|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 75 | V | ||
| Collector-Emitter Voltage | VCEO | 40 | V | ||
| Emitter-Base Voltage | VEBO | 6 | V | ||
| Collector Current - Continuous | IC | 600 | mA | ||
| Collector Power Dissipation | PC | TA=25 | 625 | mW | |
| Junction Temperature | TJ | 150 | |||
| Storage Temperature | Tstg | -55 | 150 | ||
| Collector-base breakdown voltage | V(BR)CBO | IC= 10uA , IE = 0 | 75 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 10mA , IB = 0 | 40 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE= 10uA, IC = 0 | 6 | V | |
| Collector cut-off current | ICBO | VCB= 60V, IE = 0 | 10 | nA | |
| Collector cut-off current | ICEX | VCE= 60V,VEB(Off)=3V | 10 | nA | |
| Emitter cut-off current | IEBO | VEB= 3 V, IC = 0 | 10 | nA | |
| DC current gain | hFE(1) | VCE=10V,IC= 150mA | 100 | 300 | |
| DC current gain | hFE(2) | VCE=10V,IC= 0.1mA | 40 | ||
| DC current gain | hFE(3) * | VCE=10V, IC= 500mA | 42 | ||
| Collector-emitter saturation voltage | VCE(sat)(1) * | IC= 500mA, IB=50mA | 0.6 | V | |
| Collector-emitter saturation voltage | VCE(sat)(2) * | IC= 150mA, IB=15mA | 0.3 | V | |
| Base-emitter saturation voltage | VBE(sat) * | IC= 500mA, IB= 50mA | 1.2 | V | |
| Delay time | td | VCC=30V, VEB(Off)=-0.5V, IC=150mA,IB1=15mA | 10 | nS | |
| Rise time | tr | VCC=30V, VEB(Off)=-0.5V, IC=150mA,IB1=15mA | 25 | nS | |
| Storage time | tS | VCC=30V,Ic=150mA,IB1=IB2=15mA | 225 | nS | |
| Fall time | tf | VCC=30V,Ic=150mA,IB1=IB2=15mA | 60 | nS | |
| Transition frequency | fT | VCE=20V, IC=20mA, f=100MHz | 300 | MHz |
2201121200_JSMSEMI-MPS2222A_C2874611.pdf
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