Low RDS ON N Channel Power MOSFET JSCJ CJAB25N03 Suitable for SMPS and High Frequency Power Circuits
Key Attributes
Model Number:
CJAB25N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
25A
Operating Temperature -:
-
RDS(on):
14mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
198pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.53nF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
CJAB25N03
Package:
PDFN-8(3.3x3.3)
Product Description
Product Description
The CJAB25N03 is an N-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including battery switches and load switches. Key features include a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, an excellent package for good heat dissipation, and special process technology for high ESD capability. It is ideal for SMPS, general purpose applications, hard switched and high frequency circuits, and Uninterruptible Power Supply systems.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAB25N03
- Package: PDFNWB3.33.3-8L
- Marking: CJAB25N03 = Part No., Solid dot = Pin1 indicator, XXX = Date Code
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | Ta=25 | 25 | A | ||
| Pulsed Drain Current | IDM | 100 | A | |||
| Single Pulsed Avalanche Energy | EAS(1) | VDD=15V,L=0.14mH, RG=25Ω, Starting TJ = 25°C | 70 | mJ | ||
| Power Dissipation | PD | Ta=25 | 1.5 | W | ||
| Thermal Resistance from Junction to Ambient | RθJA | Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt | 83.3 | °C/W | ||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Lead Temperature for Soldering Purposes | TL | (1/8'' from case for 10s) | 260 | °C | ||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =30V, VGS =0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| On Characteristics (note1) | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 1.0 | 1.5 | 3.0 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =10A | 10 | 14 | mΩ | |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =10A | 5.5 | 10 | mΩ | |
| Forward transconductance | gFS | VDS =5V, ID =20A | 15 | S | ||
| Dynamic Characteristics (note 2) | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =1MHz | 1530 | pF | ||
| Output capacitance | Coss | VDS =15V,VGS =0V, f =1MHz | 250 | pF | ||
| Reverse transfer capacitance | Crss | VDS =15V,VGS =0V, f =1MHz | 198 | pF | ||
| Switching Characteristics (note 2) | ||||||
| Total gate charge | Qg | VDS=15V, VGS=10V, ID=9A | 15 | nC | ||
| Gate-source charge | Qgs | VDS=15V, VGS=10V, ID=9A | 3 | nC | ||
| Gate-drain charge | Qg d | VDS=15V, VGS=10V, ID=9A | 4.5 | nC | ||
| Turn-on delay time | td(on) | VDD=15V,ID=10A, VGS=10V,RG=1.8Ω | 10 | ns | ||
| Turn-on rise time | tr | VDD=15V,ID=10A, VGS=10V,RG=1.8Ω | 8 | ns | ||
| Turn-off delay time | td(off) | VDD=15V,ID=10A, VGS=10V,RG=1.8Ω | 30 | ns | ||
| Turn-off fall time | tf | VDD=15V,ID=10A, VGS=10V,RG=1.8Ω | 5 | ns | ||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=10A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 25 | A | |||
| Pulsed drain-source diode forward current | ISM | 100 | A | |||
| Reverse Recovery Time | trr | TJ = 25°C, IF = 10A, di/dt = 100A/µs(Note1) | 22 | 35 | ns | |
| Reverse Recovery Charge | Qrr | TJ = 25°C, IF = 10A, di/dt = 100A/µs(Note1) | 12 | 20 | nC | |
2411121115_JSCJ-CJAB25N03_C504065.pdf
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