N Channel Power MOSFET JSCJ CJAC70N03 designed for uninterruptible power supplies and general purpose
Key Attributes
Model Number:
CJAC70N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.3mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
480pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
3.96nF@15V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
-
Mfr. Part #:
CJAC70N03
Package:
PDFNWB-8L-EP(5x6)
Product Description
Product Overview
The CJAC70N03 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Its high-density cell design, fully characterized avalanche capabilities, and excellent package for heat dissipation make it suitable for a wide range of applications including SMPS, general purpose applications, hard switched and high frequency circuits, and Uninterruptible Power Supplies. It offers good stability, uniformity, and high ESD capability.
Product Attributes
- Brand: CJ
- Origin: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Material: Plastic-Encapsulate
- Model: CJAC70N03
- Package: PDFNWB56-8L-D
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =24V, VGS =0V | 1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 1.4 | 2.5 | V |
| Static drain-source on-sate resistance | RDS(on) | VGS =10V, ID =20A | 4.3 | m | ||
| Static drain-source on-sate resistance | RDS(on) | VGS =4.5V, ID =20A | 6.0 | m | ||
| Forward transconductance | gFS | VDS =10V, ID =20A | 24 | S | ||
| Dynamic characteristics | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =1MHz | 1980 | pF | ||
| Output capacitance | Coss | 320 | ||||
| Reverse transfer capacitance | Crss | 240 | ||||
| Switching characteristics | ||||||
| Total gate charge | Qg | VGS=10V, VDS=25V, ID=14A | 45 | nC | ||
| Gate-source charge | Qgs | 3 | ||||
| Gate-drain charge | Qgd | 15 | ||||
| Turn-on delay time | td(on) | VDS=15V,RL=0.75, VGS=10V,RG=3 | 12 | ns | ||
| Turn-on rise time | tr | 36 | ||||
| Turn-off delay time | td(off) | 49 | ||||
| Turn-off fall time | tf | 72 | ||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=20A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 70 | A | |||
| Pulsed drain-source diode forward current | ISM | 280 | A | |||
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 70 | A | |||
| Pulsed Drain Current | IDM | 280 | A | |||
| Single Pulsed Avalanche Energy | EAS | 420 | mJ | |||
| Power Dissipation | PD | 2.0 | W | |||
| Thermal Resistance Junction to Ambient | RJA | 62.5 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | +150 | |||
| Lead Temperature for Soldering Purposes | TL | (1/8 from case for 10s) | 260 | |||
2411121115_JSCJ-CJAC70N03_C504094.pdf
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