650V IGBT transistor JSCJ CGWT40N65F2KAD with fast soft recovery diode and optimized EMI performance
Key Attributes
Model Number:
CGWT40N65F2KAD
Product Custom Attributes
Pd - Power Dissipation:
250W
Td(off):
67ns
Td(on):
21ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
22pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@1mA
Gate Charge(Qg):
79.2nC@15V
Pulsed Current- Forward(Ifm):
120A
Output Capacitance(Coes):
175pF
Reverse Recovery Time(trr):
74ns
Switching Energy(Eoff):
340uJ
Turn-On Energy (Eon):
1.23mJ
Mfr. Part #:
CGWT40N65F2KAD
Package:
TO-247
Product Description
Product Overview
The CGWT40N65F2KAD is a 650V breakdown voltage IGBT from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, featuring low Vce(sat) and a positive temperature coefficient. It offers high-speed switching with low switching loss and a fast/soft recovery freewheeling diode, ensuring good EMI behavior. This device is designed for parallel use due to its advanced Trench and FS (Field Stop) Structure, providing high application frequency and low collector-emitter saturation voltage and switching loss.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package: TO-247
- Marking: WT40N65F2KAD
- Color: Normal device (or Green molding compound if marked with solid dot)
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| STATIC PARAMETERS | ||||||
| V(BR)CES | Collector-Emitter Breakdown Voltage | VGE=0V,ICE=250uA | 650 | -- | -- | V |
| ICES | Zero Gate Voltage Collector Current | VGE=0V,VCE=650V | -- | -- | 1.0 | mA |
| IGES | Gate-Emitter leakage current | VGE=20V | -- | -- | 250 | nA |
| VGE=30V | -- | -- | 500 | nA | ||
| VGE(th) | Gate-Emitter Threshold Voltage | IC=1mA ,VCE=VGE | 4 | -- | 6.5 | V |
| VF | Diode Forward Voltage | IF=40A,Tc=25 | -- | 1.56 | -- | V |
| IF=40A,Tc=125 | -- | 1.30 | -- | V | ||
| IF=40A,Tc=150 | -- | 1.23 | -- | V | ||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC=40A,VGE=15V,TJ=25 | -- | 1.7 | -- | V |
| IC=40A,VGE=15V,TJ=125 | -- | 2.0 | -- | V | ||
| IC=40A,VGE=15V,TJ=150 | -- | 2.1 | -- | V | ||
| DYNAMIC PARAMETERS | ||||||
| Cies | Input Capacitance | VCE=30V,VGE=0V f=1MHz | -- | 1819 | -- | pF |
| Coes | Output Capacitance | -- | 175 | -- | pF | |
| Cres | Reverse Transfer Capacitance | -- | 22 | -- | pF | |
| Rg | Gate Resistance | VGE=0V, CE short, f=1MHz | -- | 1.6 | -- | |
| SWITCHING PARAMETERS | ||||||
| td(on) | Turn-On Delay Time | VCE=400V,IC=40A,Rg=10, VGE=15V, Inductive Load TJ=25 | -- | 21 | -- | ns |
| tr | Current Rise Time | -- | 46 | -- | ns | |
| td(off) | Turn-Off Delay Time | -- | 67 | -- | ns | |
| tf | Current Fall Time | -- | 34 | -- | ns | |
| Eon | Turn-On Switching Energy | (3) | -- | 1.23 | -- | mJ |
| Eoff | Turn-Off Switching Energy | -- | 0.34 | -- | mJ | |
| Ets | Total Switching Energy | -- | 1.57 | -- | mJ | |
| QG | Total Gate Charge | VCE = 480 V, IC = 40 A, VGE = 15 V | -- | 79.2 | -- | nC |
| QGE | Gate to Emitter Charge | -- | 19.3 | -- | nC | |
| QGC | Gate to Collector Charge | -- | 44.8 | -- | nC | |
| trr | Diode reverse recovery time | VR = 400V, IF = 40A, diF/dt = 100A/s | -- | 74 | -- | nS |
| Qrr | Diode reverse recovery charge | -- | 144 | -- | nC | |
| Irrm | Diode peak reverse recovery current | -- | 3.7 | -- | A | |
| Absolute Maximum Ratings | ||||||
| VCES | Collector-Emitter Voltage | 650 | V | |||
| VGES | Gate-Emitter Voltage | 20 | V | |||
| Gate-Emitter transient voltage | 30 | V | ||||
| IC | Collector Current @TC=25C | (2) | 80 | A | ||
| IC | Collector Current @TC=100C | 40 | A | |||
| ICpulse | Pulsed Collector Current, tp limited by TJmax | 120 | A | |||
| ILM(1) | Turn-off latching current | 120 | A | |||
| IF | Continuous Diode Forward Current @TC=25C | (2) | 80 | A | ||
| IF | Continuous Diode Forward Current @TC=100C | 40 | A | |||
| IFM | Diode Pulsed Current, Limited by TJmax | 120 | A | |||
| tsc | Short Circuit Withstand Time | VGE=15V, VCE400V, TJ=150 | 5 | us | ||
| PD | Power Dissipation @TC=25C | 250 | W | |||
| PD | Power Dissipation @TC =100C | 125 | W | |||
| TJ | Junction Temperature | -40 | 175 | |||
| TSTG | Storage Temperature | -55 | 150 | |||
| TL | Maximum lead temperature for soldering | 260 | ||||
| Thermal Characteristics | ||||||
| RJC | Maximum IGBT Junction-to-Case | 0.6 | /W | |||
| RJC | Maximum Diode Junction-to-Case | 1.8 | /W | |||
| RJA | Maximum Junction-to-Ambient | 40 | /W | |||
2410121342_JSCJ-CGWT40N65F2KAD_C7543670.pdf
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