TRIAC JSCJ BTA26-600BW with TO3PK Plastic Encapsulation and Mesa Glass Passivated Multi Layers Electrodes

Key Attributes
Model Number: BTA26-600BW
Product Custom Attributes
Mfr. Part #:
BTA26-600BW
Package:
TO-3P-3
Product Description

Product Overview

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD offers TO-3PK Plastic-Encapsulate TRIACs, featuring an NPNPN 5-layer structure, mesa glass passivated technology, and multi-layers metal electrodes. These TRIACs provide high junction temperature, good commutation performance, and high dV/dt and dI/dt capabilities. With an insulating voltage of 2500V(RMS), they are suitable for applications such as heater control, mixers, and motor speed controllers.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: China
  • Package Type: TO-3PK
  • Structure: NPNPN 5-layer
  • Technology: Mesa Glass Passivated
  • Electrodes: Multi Layers Metal
  • Insulating Voltage: 2500V(RMS)

Technical Specifications

Part NumberVDRM/VRRM (V)IT(RMS) (A)ITSM (A)I2t (A2s)dIT/dt (A/s)IGM (A)PG(AV) (W)VTM (V)IDRM/IRRM (A/mA)Rth(j-c) (/W)Rth(j-a) (/W)
BTA26-600(C/B)W6002525034050411.555 (Tj=25), 2.0 (Tj=125)0.950
BTA26-800(C/B)W8002525034050411.555 (Tj=25), 2.0 (Tj=125)0.950

Electrical Characteristics

SymbolParameterTest ConditionValue (CW)Value (BW)Unit
IGTGate trigger currentVD=12V, RL=33, Tj=25, Fig. 63550mA
VGTGate trigger voltage--1.31.3V
VGDNon-triggering gate voltageVD=VDRM, Tj=1250.20.2V
IHHolding currentIT=500mA, Fig. 65075mA
ILLatching currentIG=1.2IGT, Fig. 6- 60; 80- 80; 90mA
dVD/dtCritical rate of rise of off-stateVD=67%VDRM, Gate Open Tj=1255001000V/s
VTMOn-state VoltageITM tp=380s , Fig. 41.551.55V

2411121105_JSCJ-BTA26-600BW_C3031911.pdf

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