PNP silicon power transistor JSMSEMI TIP42C suitable for medium power linear switching applications
Key Attributes
Model Number:
TIP42C
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
400uA
Pd - Power Dissipation:
65W
Transition Frequency(fT):
3MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
6A
Collector - Emitter Voltage VCEO:
100V
Mfr. Part #:
TIP42C
Package:
TO-220
Product Description
Product Overview
The TIP42 series is a complementary PNP silicon power transistor in a TO-220 plastic package, designed for medium power linear switching applications. It offers robust performance for amplification tasks.
Product Attributes
- Brand: JSMICRO Semiconductor
- Complementary to: TIP41
Technical Specifications
| Parameter | Symbol | TIP42 | TIP42A | TIP42B | TIP42C | Unit | Test Conditions | Min | Typ | Max | ||||
| Collector to Base Voltage | VCBO | -40 | -60 | -80 | -100 | V | ||||||||
| Collector to Emitter Voltage | VCEO | -40 | -60 | -80 | -100 | V | ||||||||
| Emitter to Base Voltage | VEBO | -5.0 | V | |||||||||||
| Collector Current - Continuous | IC | -6.0 | A | |||||||||||
| Peak Collector Current | ICP | -10 | A | |||||||||||
| Base Current - Continuous | IB | -2.0 | A | |||||||||||
| Collector Power Dissipation | PC | 2.0 | W | |||||||||||
| Collector Power Dissipation | PC(Tc=25) | 65 | W | |||||||||||
| Junction Temperature | Tj | 150 | ||||||||||||
| Storage Temperature Range | Tsag | -55150 | ||||||||||||
| Collector to Emitter Breakdown Voltage | VCEO | -40 | -60 | -80 | -100 | V | IC=-30mA IB=0 | |||||||
| Collector Cut-Off Current | ICEO | -0.7 | -0.7 | -0.7 | -0.7 | mA | VCE=-30V IB=0 (TIP42-42A) / VCE=-60V IB=0 (TIP42B-42C) | |||||||
| Collector Cut-Off Current | ICES | -400 | -400 | -400 | -400 | A | VCE=-40V VEB=0 (TIP42) / VCE=-60V VEB=0 (TIP42A) / VCE=-80V VEB=0 (TIP42B) / VCE=-100V VEB=0 (TIP42C) | |||||||
| Emitter Cut-Off Current | IEBO | -1.0 | mA | VEB=-5.0V IC=0 | ||||||||||
| DC Current Gain | hFE(1) | 15 | 75 | VCE=-4.0V IC=-3.0A | ||||||||||
| DC Current Gain | hFE(2) | 30 | VCE=-4.0V IC=-0.3A | |||||||||||
| Collector to Emitter Saturation Voltage | VCE(sat) | -1.5 | V | IC=-6.0A IB=-0.6A | ||||||||||
| Base to Emitter Voltage | VBE | -2.0 | V | IC=-6.0A VCE=-4.0V | ||||||||||
| Transition Frequency | fT | 3.0 | MHz | VCE=-10V IC=-500mA |
2109301730_JSMSEMI-TIP42C_C2900601.pdf
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