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quality Epitaxial Planar Die NPN Transistor JSMSEMI 2N5551 for Medium Power Amplification and Switching Uses factory
quality Epitaxial Planar Die NPN Transistor JSMSEMI 2N5551 for Medium Power Amplification and Switching Uses factory

Epitaxial Planar Die NPN Transistor JSMSEMI 2N5551 for Medium Power Amplification and Switching Uses

Key Attributes
Model Number: 2N5551
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2N5551
Package:
TO-92
Product Description

Product Overview

The JSMICRO Semiconductor 2N5551 is an NPN General Purpose Transistor, ideal for medium power amplification and switching applications. It features an epitaxial planar die construction and is also available in a lead-free version. A complementary PNP type is also available.

Product Attributes

  • Brand: JSMICRO Semiconductor
  • Model: 2N5551
  • Type: NPN General Purpose Transistor
  • Construction: Epitaxial planar die
  • Availability: Lead-free version available
  • Complementary Type: PNP available

Technical Specifications

ParameterSymbolTest ConditionsMin.Max.Unit
Collector-base voltageVCBO@ Ta=25180V
Collector-emitter voltageVCEO@ Ta=25160V
Emitter-base voltageVEBO@ Ta=256V
Collector current (DC)IC@ Ta=250.6A
Collector dissipationPC@ Ta=250.35W
Thermal resistance, Junction to ambientRJA@ Ta=25357C/W
Junction and storage temperatureTj ,Tstg@ Ta=25-55+150C
Collector-base breakdown voltageV(BR)CBOIC=100A,IE=0180V
Collector-emitter breakdown voltageV(BR)CEOIC=0.1mA,IB=0160V
Emitter-base breakdown voltageV(BR)EBOIE=10A,IC=06V
Collector cut-off currentICBOIE = 0; VCB = 120V-50nA
Emitter cut-off currentIEBOIC = 0; VEB = 4V-50nA
DC current gainhFEVCE = 5V; IC= 1mA80300
DC current gainhFEVCE = 5V;IC = 10mA100
DC current gainhFEVCE = 5V;IC = 50mA30
Collector-emitter saturation voltageVCE(sat)IC = 10mA; IB=1mA0.15V
Collector-emitter saturation voltageVCE(sat)IC = 50mA; IB = 5mA0.2V
Base-emitter saturation voltageVBE(sat)IC=10mA; IB=1mA1V
Base-emitter saturation voltageVBE(sat)IC=50mA; IB=5mA1V
Transition frequencyfTIC=10mA; VCB=10V; f=100MHz100300MHz
Output capacitanceCoboIE=10mA; VCE =10V; f=1.0MHz6.0pF

2201121200_JSMSEMI-2N5551_C2874605.pdf

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