Electronic Applications PNP Silicon Transistor JSMSEMI S8550 Featuring Defined Electrical Parameters
Key Attributes
Model Number:
S8550
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
625mW
Transition Frequency(fT):
150MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
S8550
Package:
TO-92
Product Description
Product Overview
The S8550 is a PNP Silicon General Purpose Transistor designed for various electronic applications. It offers reliable performance with clearly defined electrical characteristics and absolute maximum ratings.
Product Attributes
- Brand: JSMICRO Semiconductor
- Complementary to: S8050
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
| Collector-base Breakdown Voltage | V(BR)CBO | -40 | - | - | V | IC = -100 A, IE = 0 |
| Collector-emitter Breakdown Voltage | V(BR)CEO | -25 | - | - | V | IC = -1 mA, IB = 0 |
| Emitter-base Breakdown Voltage | V(BR)EBO | -5 | - | - | V | IE = -100 A, IC = 0 |
| Collector Cut-off Current | ICBO | - | - | -0.1 | A | VCB = -40 V, IE = 0 |
| Collector Cut-off Current | ICEO | - | - | -0.1 | A | VCE = -20 V, IB = 0 |
| Emitter Cut-off Current | IEBO | - | - | -0.1 | A | VEB = -3 V, IC = 0 |
| DC Current Gain | hFE(1) | 85 | - | 400 | - | VCE = -1 V, IC = -50 mA |
| DC Current Gain | hFE(2) | 50 | - | - | - | VCE = -1 V, IC = -500 mA |
| Collector-emitter Saturation Voltage | VCE(sat) | - | - | -0.6 | V | IC = -500 mA, IB = -50 mA |
| Base-emitter Saturation Voltage | VBE(sat) | - | - | -1.2 | V | IC = -500 mA, IB = -50 mA |
| Transition Frequency | fT | 150 | - | - | MHz | VCE = -6 V, IC= -20 mA, f = 30 MHz |
hFE Classification
| Rank | Range |
| B | 85 - 160 |
| C | 120 - 200 |
| D | 160 - 300 |
Absolute Maximum Ratings
| Parameter | Symbol | Ratings | Unit |
| Collector to Base Voltage | VCBO | -40 | V |
| Collector to Emitter Voltage | VCEO | -25 | V |
| Emitter to Base Voltage | VEBO | -5 | V |
| Collector Current | IC | -500 | mA |
| Total Power Dissipation | PD | 625 | mW |
| Junction, Storage Temperature | TJ, TSTG | +150, -55 ~ +150 |
2401050928_JSMSEMI-S8550_C2931493.pdf
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