High DC Current Gain PNP Darlington Power Transistor JSMSEMI MJE700T-JSM for Amplifier and Switching
Key Attributes
Model Number:
MJE700T-JSM
Product Custom Attributes
Mfr. Part #:
MJE700T-JSM
Package:
TO-126
Product Description
Product Overview
The MJE700T is a PNP Darlington Power Transistor designed for general-purpose amplifier and low-speed switching applications. It offers a high DC Current Gain (hFE) of 750 minimum at IC=-1.5 A and a Collector-Emitter Breakdown Voltage of -60 V. It is a complement to the MJE800 type.
Product Attributes
- Brand: JSMICRO Semiconductor
- Type: PNP Darlington Power Transistor
- Complementary Type: MJE800
Technical Specifications
| Symbol | Parameter | Conditions | Value | Unit |
| V(BR)CEO | Collector-Emitter Breakdown Voltage | IC=-50mA; IB= 0 | -60 | V |
| VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC=-1.5A; IB= -30mA | -2.5 | V |
| VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= -4A; IB=-40mA | -3.0 | V |
| VBE(on)-1 | Base-Emitter On Voltage | IC= -1.5A; VCE= -3V | -2.5 | V |
| VBE(on)-2 | Base-Emitter On Voltage | IC= -4A; VCE= -3V | -3.0 | V |
| ICEO | Collector Cutoff Current | VCE=-60V; IB= 0 | -0.1 | mA |
| ICBO | Collector Cutoff Current | VCB=-60V; IE= 0 | -0.1 | mA |
| VCB=-60V; IE= 0;TC= 100 | -0.5 | mA | ||
| IEBO | Emitter Cutoff Current | VEB=-5V; IC= 0 | -2.0 | mA |
| hFE-1 | DC Current Gain | IC=- 1.5 A ; VCE= -3V | 750 | |
| hFE-2 | DC Current Gain | IC= -4A ; VCE= -3V | 100 | |
| VCBO | Collector-Base Voltage | -60 | V | |
| VCEO | Collector-Emitter Voltage | -60 | V | |
| VEBO | Emitter-Base Voltage | -5 | V | |
| IC | Collector Current-Continuous | -4 | A | |
| IB | Base Current | -0.1 | A | |
| PC | Collector Power Dissipation | TC=25 | 40 | W |
| Tj | Junction Temperature | 150 | ||
| Tstg | Storage Temperature Range | -55~150 | ||
| Rth j-c | Thermal Resistance, Junction to Case | 3.13 | /W |
2306301015_JSMSEMI-MJE700T-JSM_C7435524.pdf
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