Power Transistor JSMSEMI MJ15025G-JSM PNP Type Featuring High DC Current Gain and Safe Operating Area
Key Attributes
Model Number:
MJ15025G-JSM
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
500uA
Pd - Power Dissipation:
250W
Transition Frequency(fT):
4MHz
Type:
PNP
Current - Collector(Ic):
16A
Collector - Emitter Voltage VCEO:
250V
Operating Temperature:
-
Mfr. Part #:
MJ15025G-JSM
Package:
TO-3
Product Description
Product Overview
The MJ15023-MJ15025 series are PNP power transistors featuring high DC current gain (hFE = 15 Min @ IC = 8A) and an excellent safe operating area. Designed for high power audio, disk head positioners, and other linear applications, these transistors come in a TO-3 package and are complements to the MJ15022 and MJ15024 types.
Product Attributes
- Brand: JSMICRO Semiconductor
- Package Type: TO-3
- Complementary to: MJ15022, MJ15024
Technical Specifications
| Symbol | Parameter | Conditions | MJ15023 | MJ15025 | Unit | Min | Typ. | Max |
| VCEO(SUS) | Collector-emitter sustaining voltage | IC=0.1A ;IB=0 | -200 | -250 | V | |||
| VCEsat-1 | Collector-emitter saturation voltage | IC=8A; IB=0.8A | V | -1.4 | ||||
| VCEsat-2 | Collector-emitter saturation voltage | IC=16A; IB=3.2A | V | -4.0 | ||||
| VBE | Base-emitter on voltage | IC=8A ; VCE=4V | V | -2.2 | ||||
| ICEO | Collector cut-off current | VCE=150V; IB=0 | -0.5 | mA | ||||
| VCE=200V; IB=0 | -0.5 | mA | ||||||
| ICEX | Collector cut-off current | VCE=200V; VBE(off)=1.5V | -0.25 | mA | ||||
| VCE=250V; VBE(off)=1.5V | -0.25 | mA | ||||||
| IEBO | Emitter cut-off current | VEB=5V; IC=0 | mA | -0.5 | ||||
| hFE-1 | DC current gain | IC=8A ; VCE=4V | 15 | 60 | ||||
| IC=8A ; VCE=4V | 15 | 15 | ||||||
| hFE-2 | DC current gain | IC=16A ; VCE=4V | 5 | |||||
| Is/b | Second breakdown collector current | VCE=50Vdc,t=0.5 s,Nonrepetitive | -5.0 | A | ||||
| VCE=80Vdc,t=0.5 s,Nonrepetitive | -2.0 | A | ||||||
| COB | Output capacitance | IE=0 ; VCB=10V;f=1.0MHz | pF | 500 | ||||
| fT | Transition frequency | IC=1A ; VCE=10V;f=1.0MHz | 4 | MHz | ||||
| Absolute Maximum Ratings | ||||||||
| Symbol | Parameter | Conditions | MJ15023 | MJ15025 | Unit | Value | ||
| VCBO | Collector-base voltage | Open emitter | -350 | -400 | V | |||
| VCEO | Collector-emitter voltage | Open base | -200 | -250 | V | |||
| VEBO | Emitter-base voltage | Open collector | V | -5 | ||||
| IC | Collector current | A | -16 | |||||
| ICM | Collector current-peak | A | -30 | |||||
| IB | Base current | A | -5 | |||||
| PD | Total power dissipation | TC=25 | W | 250 | ||||
| Tj | Junction temperature | 150 | ||||||
| Tstg | Storage temperature | -65~200 | ||||||
| Thermal Characteristics | ||||||||
| Symbol | Parameter | Conditions | MJ15023 | MJ15025 | Unit | Max | ||
| Rth j-c | Thermal resistance junction to case | 0.70 | /W |
2312160126_JSMSEMI-MJ15025G-JSM_C19673772.pdf
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