High current high voltage silicon epitaxial planar transistor JSMSEMI C1815 designed for amplifier applications
Product Overview
The C1815 is a silicon epitaxial planar transistor designed for general-purpose amplifier applications. It offers high voltage and high current capabilities with excellent hFE linearity and low noise. This complementary transistor to the 2SA1015 is available in a SOT-23 package.
Product Attributes
- Brand: JSMICRO Semiconductor
- Material: Silicon Epitaxial Planar
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | MIN | TYP | MAX | UNIT |
| Breakdown Voltage | V(BR)CBO | IC=100A,IE=0 | 60 | V | ||
| V(BR)CEO | IC=0.1mA,IB=0 | 50 | V | |||
| V(BR)EBO | IC=0.1mA,IC=0 | 5 | V | |||
| Cut-off Current | ICBO | VCB=60V,IE=0 | 0.1 | A | ||
| ICEO | VCE=50V,IB=0 | 0.1 | A | |||
| Emitter Cut-off Current | IEBO | VEB=5V,IC=0 | 0.1 | A | ||
| DC Current Gain | hFE | VCE=6V,IC=2mA | 130 | 400 | ||
| hFE | VCE=6V,IC=150mA | 25 | 100 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=100mA, IB=10mA | 0.1 | 0.25 | V | |
| Base-Emitter Saturation Voltage | VBE(sat) | IC=100mA, IB=10mA | 1 | V | ||
| Transition Frequency | fT | VCE=10V, IC= 1mA f=30MHz | 80 | MHz |
hFE Classification
| Rank | Range |
| L | 130-200 |
| H | 200-400 |
Maximum Ratings (@ Ta=25)
| Parameter | Symbol | Value | Units |
| Collector-Base Voltage | VCBO | 60 | V |
| Collector-Emitter Voltage | VCEO | 50 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current -Continuous | IC | 150 | mA |
| Base Current | IB | 50 | mA |
| Collector Dissipation | PC | 400 | mW |
| Junction and Storage Temperature | Tj,Tstg | -55 to +150 |
Package Outline & Dimensions (SOT-23)
| Dim | Min | Max |
| A | 2.70 | 3.10 |
| B | 1.10 | 1.50 |
| C | 0.90 | 1.10 |
| D | 0.30 | 0.50 |
| E | 0.35 | 0.48 |
| G | 1.80 | 2.00 |
| H | 0.02 | 0.10 |
| J | 0.05 | 0.15 |
| K | 2.20 | 2.60 |
Package Information
| Device | Package | Shipping |
| C1815 | SOT-23 | 3000 pcs / Tape & Reel |
2306301522_JSMSEMI-C1815_C916378.pdf
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