High Gain PNP Silicon Transistor JSMSEMI BC807 with Low Collector Emitter Saturation Voltage in SOT23
Key Attributes
Model Number:
BC807
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
200MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
BC807
Package:
SOT-23
Product Description
Product Overview
The BC807-16/-25/-40 is a PNP Silicon Epitaxial Planar Transistor designed for general-purpose applications. It features epitaxial planar die construction, a complementary counterpart to the BC817, high collector current capability, high current gain, and a low collector-emitter saturation voltage. This transistor is housed in a SOT-23 package.
Product Attributes
- Brand: JSMICRO Semiconductor
- Material: Silicon
- Certifications: UL flammability classification rating 94V-0, solderability per MIL-STD-202, Method 208
Technical Specifications
| Part Number | Package | Shipping Quantity | Marking Code | Collector-Base Breakdown Voltage (V) | Collector-Emitter Breakdown Voltage (V) | Emitter-Base Breakdown Voltage (V) | Continuous Collector Current (A) | Power Dissipation (mW) | DC Current Gain (hFE) @ VCE=-1V, IC=-100mA | DC Current Gain (hFE) @ VCE=-1V, IC=-300mA | DC Current Gain (hFE) @ VCE=-1V, IC=-500mA | Collector-emitter Saturation Voltage (V) @ IC=-500mA, IB=-50mA | Base-emitter Saturation Voltage (V) @ IC=-500mA, IB=-50mA | Transition Frequency (MHz) @ IC=-10mA, VCE=-5V | Collector Output Capacitance (pF) @ VCB=-10V, IE=0, f=1MHz |
| BC807-16 | SOT-23 | 3000 pcs / Tape & Reel | 5A | -50 | -45 | -5 | -0.5 | 300 | 100-250 | 60 | 40 | -0.7 | -1.2 | 200 | 10 |
| BC807-25 | SOT-23 | 3000 pcs / Tape & Reel | 5B | -50 | -45 | -5 | -0.5 | 300 | 160-400 | 100 | - | -0.7 | -1.2 | 200 | 10 |
| BC807-40 | SOT-23 | 3000 pcs / Tape & Reel | 5C | -50 | -45 | -5 | -0.5 | 300 | 250-600 | 170 | - | -0.7 | -1.2 | 200 | 10 |
2306301523_JSMSEMI-BC807_C916382.pdf
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