High power NPN transistor JSMSEMI MJE3055T featuring 10 amp maximum collector current and TO 220 package type
Key Attributes
Model Number:
MJE3055T
Product Custom Attributes
Current - Collector Cutoff:
-
Pd - Power Dissipation:
-
Transition Frequency(fT):
-
Type:
-
Current - Collector(Ic):
-
Collector - Emitter Voltage VCEO:
-
Mfr. Part #:
MJE3055T
Package:
TO-220
Product Description
Product Overview
The MJE3055T is a high-power NPN transistor designed for general-purpose applications. It offers robust performance and reliability, making it suitable for various electronic circuits.
Product Attributes
- Brand: ON Semiconductor
- Origin: Malaysia
Technical Specifications
| Parameter | Value |
| Type | NPN |
| Maximum Collector Current (Ic) | 10 A |
| Maximum Collector-Emitter Voltage (Vce) | 60 V |
| Maximum Collector-Base Voltage (Vcb) | 60 V |
| Maximum Emitter-Base Voltage (Veb) | 7 V |
| Maximum Power Dissipation (Pd) | 75 W |
| DC Current Gain (hFE) | 25 (min) @ 4 A, 4 V |
| Package | TO-220 |
2304140030_JSMSEMI-MJE3055T_C916520.pdf
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