Transistor JSMSEMI MMBTH10 Silicon Epitaxial Planar Type Suitable for VHF UHF Frequency Applications

Key Attributes
Model Number: MMBTH10
Product Custom Attributes
Emitter-Base Voltage(Vebo):
3V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
650MHz
Type:
NPN
Current - Collector(Ic):
50mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBTH10
Package:
SOT-23
Product Description

Product Overview

The MMBTH10 is a Silicon Epitaxial Planar Transistor designed for high transition frequency applications. It offers efficient power dissipation and is suitable for VHF/UHF transistor applications.

Product Attributes

  • Brand: JSMICRO Semiconductor
  • Package Type: SOT-23
  • Material: Silicon Epitaxial Planar
  • Origin: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolTest ConditionsMINMAXUNIT
Collector-base breakdown voltageV(BR)CBOIC=100A,IE=030V
Collector-emitter breakdown voltageV(BR)CEOIC=1mA,IB=025V
Emitter-base breakdown voltageV(BR)EBOIE=10A,IC=03V
Collector cut-off currentICBOVCB=25V,IE=00.1A
Emitter cut-off currentIEBOVEB=2V,IC=00.1A
DC current gainhFEVCE=10V,IC=4.0mA60
Collector-emitter saturation voltageVCE(sat)IC=4.0mA, IB= 0.4mA0.5V
Base-emitter on voltageVBE(on)IC=4.0mA, VCE=10V0.95V
Transition frequencyfTVCE=10V, IC= 4.0mA, f=100MHz650MHz
Collector-Base CapacitanceCcbVCB=10V,IE=0,f=1.0MHz0.7pF
Collector-Base Feedback CapacitanceCrbVCB=10V,IE=0,f=1.0MHz0.350.65pF
Collector Base Time Constantrb'CCIC=4mA,VCB=10V, f=31.8MHz9.0pS

Maximum Ratings

SymbolParameterValueUnits
VCBOCollector-Base Voltage30V
VCEOCollector-Emitter Voltage25V
VEBOEmitter-Base Voltage3V
ICCollector Current -Continuous50mA
PCCollector Dissipation350mW
TJ, TSTGJunction and Storage Temperature-55 to +150

Package Information

DevicePackageShipping
MMBTH10SOT-233000pcs / Tape & Reel

2306301522_JSMSEMI-MMBTH10_C916369.pdf

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