P channel MOSFET JSMSEMI NDT2955 optimized for switching applications and 5V gate drive compatibility
Key Attributes
Model Number:
NDT2955
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
RDS(on):
170mΩ@10V,0.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.25V
Reverse Transfer Capacitance (Crss@Vds):
28pF
Number:
-
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
160pF@10V
Mfr. Part #:
NDT2955
Package:
SOT-223
Product Description
Product Overview
The JSMICRO NDT2955 is a P-CHANNEL MOSFET designed for switching applications. It offers low on-resistance, high-speed switching, and low drive current, making it suitable for switching regulators and DC-DC converters. This device can be driven from a 5V source with a 4V gate drive.
Product Attributes
- Brand: JSMICRO
- Model: NDT2955
- Type: P-CHANNEL MOSFET FOR SWITCHING
- Package: SOT-223
- Website: www.jsmsemi.com
Technical Specifications
| Item | Symbol | Min | Typ | Max | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Drain to source breakdown voltage | V(BR)DSS | 60 | V | ID = 10 mA, VGS = 0 | ||
| Gate to source breakdown voltage | V(BR)GSS | 20 | V | IG = 100 A, VDS = 0 | ||
| Gate to source leak current | IGSS | 5 | A | VGS = 16 V, VDS = 0 | ||
| Zero gate voltage drain current | IDSS | 10 | A | VDS = 50 V, VGS = 0 | ||
| Gate to source cutoff voltage | VGS(off) | 1.0 | 2.25 | V | ID = 1 mA, VDS = 10 V | |
| Static drain to source on state resistance | RDS (on) | 0.15 | 0.17 | ID = 0.5 A, VGS = 10 V Note 3 | ||
| Static drain to source on state resistance | RDS (on) | 0.19 | 0.2 | ID = 0.5 A, VGS = 4 V Note 3 | ||
| Forward transfer admittance | |yfs| | 0.6 | 1.0 | S | ID = 0.5 A, VDS = 10 V Note 3 | |
| Input capacitance | Ciss | 160 | pF | VDS = 10 V, VGS = 0, f = 1 MHz | ||
| Output capacitance | Coss | 80 | pF | VDS = 10 V, VGS = 0, f = 1 MHz | ||
| Reverse transfer capacitance | Crss | 28 | pF | VDS = 10 V, VGS = 0, f = 1 MHz | ||
| Turn-on delay time | td (on) | 7 | ns | ID = 0.5 A, VGS = 10 V, RL = 60 | ||
| Rise time | tr | 8 | ns | ID = 0.5 A, VGS = 10 V, RL = 60 | ||
| Turn-off delay time | td (off) | 30 | ns | ID = 0.5 A, VGS = 10 V, RL = 60 | ||
| Fall time | tf | 25 | ns | ID = 0.5 A, VGS = 10 V, RL = 60 | ||
| Body to drain diode forward voltage | VDF | 1.1 | V | IF = 1 A, VGS = 0 | ||
| Body to drain diode reverse recovery time | trr | 90 | ns | IF = 1 A, VGS = 0, diF/dt = 50 A/s | ||
| Channel dissipation | Pch | 1 | W | (Ta = 25C, on the alumina ceramic board) | ||
| Channel temperature | Tch | 150 | C | |||
| Storage temperature | Tstg | 55 | +150 | C | ||
| Drain to source voltage | VDSS | 60 | V | Absolute Maximum Ratings | ||
| Gate to source voltage | VGSS | 20 | V | Absolute Maximum Ratings | ||
| Drain current | ID | 3 | A | Absolute Maximum Ratings (Ta = 25C) | ||
| Drain peak current | ID (pulse) | 4 | A | Absolute Maximum Ratings (Ta = 25C) | ||
| Body to drain diode reverse drain current | IDR | 1 | A | Absolute Maximum Ratings (Ta = 25C) |
2401051656_JSMSEMI-NDT2955_C5156058.pdf
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