Load Switching Solutions with JSMSEMI AO3402 N Channel MOSFET Featuring 30 Volt Drain Source Voltage
Key Attributes
Model Number:
AO3402
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
RDS(on):
100mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
1 N-channel
Input Capacitance(Ciss):
390pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
4.34nC@4.5V
Mfr. Part #:
AO3402
Package:
SOT-23
Product Description
Product Overview
The JSMICRO AO3402 is a N-Channel 30-V (D-S) MOSFET featuring TrenchFET technology. It is designed for surface mount applications and offers lead-free acquisition. This MOSFET is ideal for load switching in portable devices and DC/DC converters, providing efficient power management.
Product Attributes
- Brand: JSMICRO Semiconductor
- Product Code: AO3402
- Channel Type: N-Channel
- Package: SOT-23
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25°C | 4 | A | ||
| Pulsed Drain Current | IDM | t ≤ 10s | 30 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 1.25 | W | ||
| Maximum Junction-to-Lead Thermal Resistance | RθJL | Steady-State | 63 | °C/W | ||
| Maximum Junction-to-Ambient Thermal Resistance | RθJA | A t ≤ 10s | 70 | °C/W | ||
| Maximum Junction-to-Ambient Thermal Resistance | RθJA | Steady-State | 90 | °C/W | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | ||
| STATIC CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID=250µA, VGS=0V | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=24V, VGS=0V | 1 | µA | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=±12V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | ID=250µA, VDS=VGS | 0.6 | 0.8 | 1.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V, ID=1.5A | 0.100 | Ω | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=2.3A | 0.070 | Ω | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=4A | 0.055 | Ω | ||
| Forward Transconductance | gFS | VDS=5V, ID=4A | 8 | S | ||
| Diode Forward Voltage | VSD | IS=1A,VGS=0V | 0.8 | 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | 4.0 | A | |||
| DYNAMIC CHARACTERISTICS | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=15V, f=1MHz | 390 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=15V, f=1MHz | 54.5 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=15V, f=1MHz | 41 | pF | ||
| Gate Resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 3 | Ω | ||
| SWITCHING CHARACTERISTICS | ||||||
| Total Gate Charge | Qg | VGS=4.5V, VDS=15V, ID=4A | 4.34 | nC | ||
| Gate Source Charge | Qgs | VGS=4.5V, VDS=15V, ID=4A | 0.6 | nC | ||
| Gate Drain Charge | Qgd | VGS=4.5V, VDS=15V, ID=4A | 1.38 | nC | ||
| Turn-On DelayTime | tD(on) | VGS=10V, VDS=15V, RL=3.75Ω, RGEN=6Ω | 3.3 | ns | ||
| Turn-On Rise Time | tr | VGS=10V, VDS=15V, RL=3.75Ω, RGEN=6Ω | 1 | ns | ||
| Turn-Off DelayTime | tD(off) | VGS=10V, VDS=15V, RL=3.75Ω, RGEN=6Ω | 21.7 | ns | ||
| Turn-Off Fall Time | tf | VGS=10V, VDS=15V, RL=3.75Ω, RGEN=6Ω | 2.1 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF=4A, dI/dt=100A/µs | 12 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=4A, dI/dt=100A/µs | 6.3 | nC | ||
2210220330_JSMSEMI-AO3402_C2874692.pdf
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