JSMSEMI JSM2302A A2SHB N Channel MOSFET SOT 23 Package Optimized for High Speed Switching and Battery
Key Attributes
Model Number:
JSM2302A-A2SHB
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@50uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
900mW
Mfr. Part #:
JSM2302A-A2SHB
Package:
SOT-23
Product Description
Product Overview
N-Channel MOSFET in a SOT-23 Plastic Package featuring super high dense cell design for low RDS(ON). Ideal for battery management, high-speed switching, and low-power DC-DC converters.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: JSM2302A-A2SHB
- Package: SOT-23
- Marking: A2SHB
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0, ID=10A | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0, VDS=20V | 1.0 | A | ||
| GateBody Leakage | IGSS | VGS=8V, VDS=0V | 100 | nA | ||
| Static DrainSource OnResistance | RDS(on)1 | VGS=4.5V, ID=3.6A | 60 | m | ||
| Static DrainSource OnResistance | RDS(on)2 | VGS=2.5V, ID=3.1A | 115 | m | ||
| Forward Transconductance | gFS | VDS=5V, ID=3.6A | 8 | S | ||
| DrainSource Diode Forward Voltage | VSD | VGS=0V, ID=1.25A | 0.75 | 1.2 | V | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=50A | 0.50 | 1.0 | V | |
| State Drain Current | ID(on) | VDS=5V, VGS=2.5V | 4 | A | ||
| TurnOn Delay Time | td(on) | VDD=10V, ID=3.6A, VGEN=4.5V, RGEN=6, RL=2.8 | 7 | ns | ||
| TurnOn Rise Time | tr | VDD=10V, ID=3.6A, VGEN=4.5V, RGEN=6, RL=2.8 | 55 | ns | ||
| TurnOff Delay Time | td(off) | VDD=10V, ID=3.6A, VGEN=4.5V, RGEN=6, RL=2.8 | 15 | ns | ||
| TurnOff Fall Time | tf | VDD=10V, ID=3.6A, VGEN=4.5V, RGEN=6, RL=2.8 | 10 | ns |
2110272030_JSMSEMI-JSM2302A-A2SHB_C2905536.pdf
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