Low Gate Charge P Channel MOSFET JSMSEMI IRF7240TRPBF JSM Suitable for Power Management Applications
Key Attributes
Model Number:
IRF7240TRPBF-JSM
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
12A
RDS(on):
13mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
288pF@20V
Number:
1 P-Channel
Output Capacitance(Coss):
-
Pd - Power Dissipation:
3.5W
Input Capacitance(Ciss):
3.799nF@20V
Gate Charge(Qg):
41nC@10V
Mfr. Part #:
IRF7240TRPBF-JSM
Package:
SOP-8
Product Description
Product Overview
This P-Channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(on) with low gate charge, making it suitable for a wide range of applications. Key advantages include low gate charge, a green device option, advanced high cell density trench technology for ultra-low RDS(ON), and an excellent package design for effective heat dissipation.
Product Attributes
- Brand: JSMICRO Semiconductor
- Part Number: IRF7240TRPBF
- Package: SOP-8
- Marking: IRF7240TRPBF
- Origin: (Derived from page numbering indicating Chinese origin)
- Green Device Available: Yes
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | -40 | V | ||
| VGS | Gate-Source Voltage | ±20 | V | ||
| ID | Continuous Drain Current (TC=25) | -12 | A | ||
| ID | Continuous Drain Current (TC=100) | -7.2 | A | ||
| IDM | Drain Current-Pulsed | -48 | A | ||
| PD | Power Dissipation | 3.5 | W | ||
| TJ, TSTG | Operating and Storage Junction Temperature Range | -55 | +150 | ||
| BVDSS | Drain-Sourtce Breakdown Voltage (VGS=0V,ID=250A) | -40 | V | ||
| IDSS | Zero Gate Voltage Drain Current (VGS=0V, VDS=-40V) | -1 | μA | ||
| IGSS | Gate-Source Leakage Current (VGS=±20V, VDS=0A) | ±100 | nA | ||
| VGS(th) | GATE-Source Threshold Voltage (VGS=VDS, ID=250μA) | -1.7 | -2.5 | V | |
| RDS(ON) | Drain-Source On Resistance (VGS=-10V,ID=-12A) | 10 | 13 | mΩ | |
| RDS(ON) | Drain-Source On Resistance (VGS=-4.5V,ID=-10A) | 15.5 | 22 | mΩ | |
| Ciss | Input Capacitance (VDS=-20V, VGS=0V, f=1MHz) | 3799 | pF | ||
| Coss | Output Capacitance | 328 | pF | ||
| Crss | Reverse Transfer Capacitance | 288 | pF | ||
| td(on) | Turn-On Delay Time (VDD=-20V, VGS=-10V ID=-12A,RGEN=2.5Ω) | 9 | ns | ||
| tr | Rise Time | 20 | ns | ||
| td(off) | Turn-Off Delay Time | 52 | ns | ||
| tf | Fall Time | 28 | ns | ||
| Qg | Total Gate Charge (VDS=-20V , VGS=-10V , ID=-12A) | 41 | nC | ||
| Qgs | Gate-Source Charge | 7.2 | nC | ||
| Qgd | Gate-Drain “Miller” Charge | 8.4 | nC | ||
| VSD | Diode Forward Voltage (VGS=0V,IS=-12A) | -0.8 | -1.2 | V | |
| Is | Maximum Continuous Drain to Source Diode Forward Current | -12 | A | ||
| Ism | Max. Pulsed Forward Current | -48 | A | ||
| Trr | Reverse Recovery Time (VGS=0V, IS=-12A, di/dt=100A/μs) | 39 | ns | ||
| Qrr | Reverse Recovery Charge | 42 | nC | ||
| RθJA | Thermal Resistance, Junction to Ambient | 36 | Ω/W |
2311161802_JSMSEMI-IRF7240TRPBF-JSM_C18190856.pdf
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