Durable 500V N Channel MOSFET JSMSEMI IRFP460PBF JSM Suitable for Switch Mode Power Supplies and UPS
Key Attributes
Model Number:
IRFP460PBF-JSM
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
18A
RDS(on):
340mΩ@10V,9A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
15pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
160W
Input Capacitance(Ciss):
2.367nF
Gate Charge(Qg):
53.4nC@10V
Mfr. Part #:
IRFP460PBF-JSM
Package:
TO-247
Product Description
Product Overview
The IRFP460PBF is a 500V N-Channel MOSFET designed for high-performance applications. It features fast switching speeds, 100% avalanche tested, and improved dv/dt capability, making it ideal for Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC) systems.
Product Attributes
- Brand: JSMICRO Semiconductor
- Device Marking: IRFP460
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| Drain-Source Voltage (VGS = 0V) | VDSS | 500 | V | |
| Continuous Drain Current | ID | TC = 25C | 18 | A |
| Pulsed Drain Current (note1) | IDM | 72 | A | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Single Pulse Avalanche Energy (note2) | EAS | 980 | mJ | |
| Avalanche Current (note1) | IAS | 14 | A | |
| Repetitive Avalanche Energy (note1) | EAR | 588 | mJ | |
| Power Dissipation (TC = 25C) | PD | 160 | W | |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55~+150 | C | |
| Thermal Resistance, Junction-to-Case | RthJC | TO-247 | 0.6 | K/W |
| Thermal Resistance, Junction-to-Ambient | RthJA | TO-247 | 40 | J/W |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 500 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 500V, VGS = 0V, TJ = 25ºC | 1 | µA |
| Gate-Source Leakage | IGSS | VGS = ±30V | ±100 | nA |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 3.0 -- 4.0 | V |
| Drain-Source On-Resistance (Note3) | RDS(on) | VGS = 10V, ID = 9A | 0.28 -- 0.34 | Ω |
| Input Capacitance | Ciss | VGS = 0V, VDS = 25V, f = 1.0MHz | 2367 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 25V, f = 1.0MHz | 228 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 25V, f = 1.0MHz | 15 | pF |
| Total Gate Charge | Qg | VDD =400V, ID = 18A, VGS = 10V | 53.4 | nC |
| Gate-Source Charge | Qgs | VDD =400V, ID = 18A, VGS = 10V | 10 | nC |
| Gate-Drain Charge | Qgd | VDD =400V, ID = 18A, VGS = 10V | 20 | nC |
| Turn-on Delay Time | td(on) | VDD = 250V, ID =18A, RG = 25 Ω | 51.3 | ns |
| Turn-on Rise Time | tr | VDD = 250V, ID =18A, RG = 25 Ω | 36.5 | ns |
| Turn-off Delay Time | td(off) | VDD = 250V, ID =18A, RG = 25 Ω | 232 | ns |
| Turn-off Fall Time | tf | VDD = 250V, ID =18A, RG = 25 Ω | 61 | ns |
| Continuous Body Diode Current | IS | TC = 25 ºC | 18 | A |
| Pulsed Diode Forward Current | ISM | 72 | A | |
| Body Diode Voltage | VSD | TJ = 25ºC, ISD = 9A, VGS = 0V | 1.4 | V |
| Reverse Recovery Time | trr | VGS = 0V,IS = 18A, diF/dt =100A /μs | 497 | ns |
| Reverse Recovery Charge | Qrr | VGS = 0V,IS = 18A, diF/dt =100A /μs | 4 | µC |
2407101726_JSMSEMI-IRFP460PBF-JSM_C5296735.pdf
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