Compact surface mount MOSFET JSMSEMI AO3400A N channel 30 volt device for portable electronics power
Key Attributes
Model Number:
AO3400A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
RDS(on):
52mΩ@2.5V,4A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
77pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.03nF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
AO3400A
Package:
SOT-23-3L
Product Description
Product Overview
The AO3400A is an N-Channel 30-V(D-S) MOSFET designed for load switching in portable devices and DC/DC converters. It features TrenchFET Power MOSFET technology and is available in a lead-free, surface-mount SOT-23 package.
Product Attributes
- Brand: JSMICRO Semiconductor
- Product Code: AO3400A
- Package: SOT-23, SOT-23-3L
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Drain-Source Voltage | VDS | 30 | V | |||
| Continuous Drain Current | ID | TA=25°C | 5.8 | A | ||
| Pulsed Drain Current | IDM | TA=25°C, t ≤ 10s | 30 | A | ||
| Power Dissipation | PD | TA=25°C | 1.4 | W | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | ||
| Thermal Characteristics | ||||||
| Maximum Junction-to-Lead Steady-State | RΘJL | 43 | 60 | °C/W | ||
| Maximum Junction-to-Ambient Steady-State | RΘJA | 90 | °C/W | |||
| Electrical Characteristics (TJ=25°C unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID=250µA, VGS=0V | 30 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS=±12V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | ID=250µA, VDS=VGS | 0.6 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=25V, VGS=0V | 1 | µA | ||
| On state drain current | ID(ON) | VGS=2.5V, ID=4.0A | 30 | A | ||
| Static Drain-Source On-Resistance | RDS(on)MAX | VGS=4.5V, ID=5.8A | 0.033 | Ω | ||
| Static Drain-Source On-Resistance | RDS(on)MAX | VGS=2.5V, ID=5.0A | 0.052 | Ω | ||
| Static Drain-Source On-Resistance | RDS(on)MAX | VGS=10V, ID=5.8A | 0.028 | Ω | ||
| Forward Transconductance | gFS | VDS=5V, ID=5.8A | 10 | 15 | S | |
| Diode Forward Voltage | VSD | IS=1A,VGS=0V | 0.71 | 1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF=5A, dI/dt=100A/µs | 16 | 20 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF=5A, dI/dt=100A/µs | 8.9 | 12 | nC | |
| DYNAMIC PARAMETERS | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=0V, f=1MHz | 823 | 1030 | pF | |
| Output Capacitance | Coss | VGS=0V, VDS=15V, f=1MHz | 99 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=15V, f=1MHz | 77 | pF | ||
| Gate resistance | Rg | 1.2 | 3.6 | Ω | ||
| Total Gate Charge | Qg | VGS=4.5V, VDS=15V, ID=5.8A | 9.7 | 12 | nC | |
| Gate Source Charge | Qgs | VGS=4.5V, VDS=15V, ID=5.8A | 1.6 | nC | ||
| Gate Drain Charge | Qgd | VGS=4.5V, VDS=15V, ID=5.8A | 3.1 | nC | ||
| SWITCHING PARAMETERS | ||||||
| Turn-On DelayTime | tD(on) | VGS=10V, VDS=15V, RL=2.7Ω, RGEN=3Ω | 3.3 | 5 | ns | |
| Turn-On Rise Time | tr | VGS=10V, VDS=15V, RL=2.7Ω, RGEN=3Ω | 4.8 | 7 | ns | |
| Turn-Off DelayTime | tD(off) | VGS=10V, VDS=15V, RL=2.7Ω, RGEN=3Ω | 26.3 | 40 | ns | |
| Turn-Off Fall Time | tf | VGS=10V, VDS=15V, RL=2.7Ω, RGEN=3Ω | 4.1 | 6 | ns | |
2401051657_JSMSEMI-AO3400A_C5296724.pdf
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