Power switching N Channel MOSFET JSMSEMI JSM100N03D with 30V VDS and 100A drain current continuous rating
Key Attributes
Model Number:
JSM100N03D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.4mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
221pF@0V,1V
Number:
1 N-channel
Input Capacitance(Ciss):
1.963nF@15V
Pd - Power Dissipation:
105W
Gate Charge(Qg):
41nC@10V
Mfr. Part #:
JSM100N03D
Package:
TO-252
Product Description
Product Overview
The JSM100N03D is an N-Channel MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide variety of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key features include a VDS of 30V, ID of 100A, and a low RDS(ON) of 5.5m@VGS=10V. The device boasts advanced high cell density trench technology for ultra-low RDS(ON) and an excellent package for good heat dissipation. It is also available as a green device.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: JSM100N03D
- Type: N-Channel MOSFET
- Technology: Advanced Trench Technology
- Certifications: Green device available
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | (TC=25 unless otherwise noted) | 100 | A | ||
| Drain Current-Continuous | ID (100) | (TC=100) | 70 | A | ||
| Pulsed Drain Current | IDM | 400 | A | |||
| Maximum Power Dissipation | PD | 110 | W | |||
| Single pulse avalanche energy | EAS | (Note 5) | 350 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RJC | (Note 2) | 1.36 | /W | ||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 30 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | - | 1 | µA | |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | ±100 | nA | |
| On Characteristics (Note 3) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250µA | 1 | 1.6 | 3 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=20A | 4.0 | 5.5 | mΩ | |
| Forward Transconductance | gFS | VDS=10V,ID=20A | 50 | - | - | S |
| Dynamic Characteristics (Note4) | ||||||
| Input Capacitance | Clss | 3400 | PF | |||
| Output Capacitance | Coss | 356 | PF | |||
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V, F=1.0MHz | 308 | PF | ||
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=15V,ID=60A VGS=4.5V,RGEN=1.8Ω | - | - | 11 | nS |
| Turn-on Rise Time | tr | - | 160 | - | nS | |
| Turn-Off Delay Time | td(off) | - | - | 25 | nS | |
| Turn-Off Fall Time | tf | - | 60 | - | nS | |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | 70 | nC | |||
| Gate-Source Charge | Qgs | 8.8 | nC | |||
| Gate-Drain Charge | Qg d | VDS=15V,ID=30A, VGS=10V | 16.3 | nC | ||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | (Note 3) VGS=0V,IS=20A | - | - | 1.2 | V |
| Diode Forward Current | IS | (Note 2) | - | - | 100 | A |
| Reverse Recovery Time | trr | - | 56 | - | nS | |
| Reverse Recovery Charge | Qrr | TJ = 25°C, IF = 60A di/dt = 100A/μs(Note3) | - | 110 | - | nC |
2512091840_JSMSEMI-JSM100N03D_C917158.pdf
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