JSMSEMI SIR662DP T1 GE3 JSM N Channel MOSFET with high cell density and excellent thermal management
Key Attributes
Model Number:
SIR662DP-T1-GE3-JSM
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
77.7pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
5.377nF@25V
Pd - Power Dissipation:
140W
Gate Charge(Qg):
66.1nC@10V
Mfr. Part #:
SIR662DP-T1-GE3-JSM
Package:
DFN5060-8L
Product Description
Product Overview
The SIR662DP-T1-GE3 is an N-Channel MOSFET featuring advanced trench technology and design, offering excellent RDS(on) with low gate charge. Its high cell density trench technology ensures ultra-low RDS(ON). This device is suitable for a wide variety of applications and is available as a green device. It boasts excellent package design for superior heat dissipation.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: SIR662DP-T1-GE3
- Type: N-Channel MOSFET
- Availability: Green device available
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | VDS | 60 | V | |||
| VGS | ±20 | V | ||||
| ID (TC=25) | 130 | A | ||||
| ID (TC=100) | A | |||||
| ID (Pulsed) | 390 | A | ||||
| EAS | 5 | 80 | mJ | |||
| PD | 140 | W | ||||
| Tj, Ts | Operating and Storage Junction Temperature Range | -55 | +150 | |||
| Thermal Characteristics | RJC | Junction to Case | 0.89 | /W | ||
| RJA | Junction to Ambient | 62 | /W | |||
| RJA | Junction to Ambient (FR-4, 1in, 2oz Copper, still air, Ta=25) | 62 | /W | |||
| Off Characteristics | BVDSS | VGS=0V, ID=250A | 60 | V | ||
| IDSS | VGS=0V, VDS=60V | 1 | A | |||
| IGSS | VGS=±20V, VDS=0A | ±100 | nA | |||
| VGS(th) | VGS=VDS, ID=250A | 1 | 2.5 | V | ||
| RDS(ON) | VGS=10V, ID=20A | 2.5 | 3 | m | ||
| Dynamic Characteristics | Ciss | VDS=25V, VGS=0V, f=1MHz | 5377 | pF | ||
| Coss | VDS=25V, VGS=0V, f=1MHz | 1666 | pF | |||
| Crss | VDS=25V, VGS=0V, f=1MHz | 77.7 | pF | |||
| Switching Characteristics | td(on) | VDD=30V, ID=25A, RG=2, VGS=10V | 22.5 | ns | ||
| tr | VDD=30V, ID=25A, RG=2, VGS=10V | 6.7 | ns | |||
| td(off) | VDD=30V, ID=25A, RG=2, VGS=10V | 80.3 | ns | |||
| tf | VDD=30V, ID=25A, RG=2, VGS=10V | 26.8 | ns | |||
| Gate Charge | Qg | VGS=10V, VDS=30V, ID=25A | 66.1 | nC | ||
| Qgs | VGS=10V, VDS=30V, ID=25A | 10.7 | nC | |||
| Qgd | VGS=10V, VDS=30V, ID=25A | 10.9 | nC | |||
| Drain-Source Diode Characteristics | VSD | VGS=0V, IS=25A | 1.3 | V | ||
| IS (Continuous) | VGS| 130 | A | | |||
| IS (Pulsed) | 390 | A | ||||
| Reverse Recovery | Trr | IS=25 A, di/dt=100 A/s | 68.3 | ns | ||
| Reverse Recovery Charge | Qrr | IS=25 A, di/dt=100 A/s | 73 |
2307141056_JSMSEMI-SIR662DP-T1-GE3-JSM_C7462820.pdf
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