Low On Resistance N Channel Enhancement Mode MOSFET JSMSEMI AO4800 for Power Switching Solutions
Key Attributes
Model Number:
AO4800
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
23mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
57pF@15V
Number:
2 N-Channel
Input Capacitance(Ciss):
580pF
Pd - Power Dissipation:
1.7W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
AO4800
Package:
SOP-8
Product Description
Product Overview
The AO4800 is a 30V N-Channel Enhancement Mode MOSFET designed for power management applications. It offers low on-resistance (RDS(ON)) at various gate-source voltages, making it suitable for efficient power switching. This device is reliable, rugged, and available in lead-free and green options, with 100% UIS testing for quality assurance.
Product Attributes
- Brand: JSMICRO Semiconductor
- Product Series: AO4800
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Certifications: RoHS Compliant (Lead Free and Green Devices Available)
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 30 | V | |||
| Gate-Source Voltage (VGSS) | ±12 | V | |||
| Continuous Drain Current (ID) | TA=25°C, VGS=10V | 8 | A | ||
| Continuous Drain Current (ID) | TA=70°C, VGS=10V | 6.5 | A | ||
| Pulsed Drain Current (IDM) | VGS=10V, t ≤ 300µs | 40 | A | ||
| Diode Continuous Forward Current (IS) | 9 | A | |||
| Avalanche Current (IAS) | Single Pulse | 9 | A | ||
| Avalanche Energy (EAS) | Single Pulse (L=0.5mH) | 20 | mJ | ||
| Maximum Junction Temperature (TJ) | 150 | °C | |||
| Storage Temperature Range (TSTG) | -55 | 150 | °C | ||
| Maximum Power Dissipation (PD) | TA=25°C | 1.7 | W | ||
| Maximum Power Dissipation (PD) | TA=70°C | 1.08 | W | ||
| Thermal Resistance-Junction to Ambient (RθJA) | t ≤ 10s | 48 | °C/W | ||
| Thermal Resistance-Junction to Ambient (RθJA) | Steady State | 74 | °C/W | ||
| Thermal Resistance-Junction to Lead (RθJL) | Steady State | 32 | °C/W | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250µA | 30 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS=24V, VGS=0V | - | - | 1 | µA |
| Zero Gate Voltage Drain Current (IDSS) | TJ=85°C, VDS=24V, VGS=0V | - | - | 30 | µA |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250µA | 0.6 | 0.9 | 1.5 | V |
| Gate Leakage Current (IGSS) | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| Drain-Source On-state Resistance (RDS(ON)) | VGS=10V, IDS=8A | - | 23 | 28 | mΩ |
| Drain-Source On-state Resistance (RDS(ON)) | VGS=4.5V, IDS=7A | - | 27 | 37 | mΩ |
| Drain-Source On-state Resistance (RDS(ON)) | VGS=2.5V, IDS=7A | - | 35 | 45 | mΩ |
| Forward Transconductance (Gfs) | VDS=5V, IDS=8A | - | 32 | - | S |
| Diode Forward Voltage (VSD) | ISD=1A, VGS=0V | - | 0.7 | 1.1 | V |
| Reverse Recovery Time (trr) | ISD=8A, dlSD/dt=100A/µs | - | 15.5 | - | ns |
| Reverse Recovery Charge (Qrr) | ISD=8A, dlSD/dt=100A/µs | - | 6.5 | - | nC |
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | - | 1.3 | 2.3 | Ω |
| Input Capacitance (Ciss) | VGS=0V, VDS=15V, Frequency=1.0MHz | - | 580 | - | pF |
| Output Capacitance (Coss) | VGS=0V, VDS=15V, Frequency=1.0MHz | - | 95 | - | pF |
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=15V, Frequency=1.0MHz | - | 57 | - | pF |
| Turn-on Delay Time (td(ON)) | VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω | - | 5.9 | 10 | ns |
| Turn-on Rise Time (tr) | VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω | - | 10 | 17 | ns |
| Turn-off Delay Time (td(OFF)) | VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω | - | 17 | 35 | ns |
| Turn-off Fall Time (tf) | VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω | - | 4 | 9 | ns |
| Gate Charge Characteristics | |||||
| Total Gate Charge (Qg) | VDS=15V, VGS=10V, IDS=8A | - | 10.2 | 14 | nC |
| Total Gate Charge (Qg) | VDS=15V, VGS=4.5V, IDS=8A | - | 5.3 | - | nC |
| Threshold Gate Charge (Qgth) | VDS=15V, VGS=4.5V, IDS=8A | - | 0.78 | - | nC |
| Gate-Source Charge (Qgs) | VDS=15V, VGS=4.5V, IDS=8A | - | 1.7 | - | nC |
| Gate-Drain Charge (Qgd) | VDS=15V, VGS=4.5V, IDS=8A | - | 2.2 | - | nC |
2306211000_JSMSEMI-AO4800_C5456627.pdf
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