JSMSEMI AO4618 JSM N P Channel MOSFET Offering Low On Resistance and Low Gate Charge for Performance
Key Attributes
Model Number:
AO4618-JSM
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
53mΩ@10V,6A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
850pF@20V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
AO4618-JSM
Package:
SOP-8
Product Description
Product Overview
The AO4618 is an N+P Channel MOSFET utilizing advanced trench technology and design to deliver excellent on-resistance (RDS(ON)) with low gate charge. This device is suitable for a wide variety of applications due to its efficient performance and robust construction.
Product Attributes
- Brand: JSMICRO Semiconductor
- Device Type: N+P Channel MOSFET
- Technology: Advanced high cell density trench technology
- Certifications: Green device available
Technical Specifications
| Parameter | N-Channel | P-Channel | Units |
| VDS (Drain-Source Voltage) | 40 | -40 | V |
| VGS (Gate-Source Voltage) | ±20 | ±20 | V |
| ID Continuous Drain Current (TA=25) | 8 | -6 | A |
| ID Continuous Drain Current (TA=100) | 5.2 | -3.9 | A |
| IDM Pulsed Drain Current | 32 | -24 | A |
| EAS Single Pulsed Avalanche Energy | 13 | 17.6 | mJ |
| PD Power Dissipation (TA=25) | 2.0 | 3.2 | W |
| TJ, TSTG Operating and Storage Junction Temperature Range | -55 to +150 | ||
| RJA Thermal Resistance, Junction to Ambient | 62.5 | 39 | /W |
| BVDSS Drain-Source Breakdown Voltage (VGS=0V, ID=250A) | 40 | -40 | V |
| IDSS Zero Gate Voltage Drain Current (VGS=0V) | 1 μA (VDS=40V) | -1 μA (VDS=-40V) | μA |
| IGSS Gate-Source Leakage Current (VGS=±20V, VDS=0A) | ±100 | nA | |
| VGS(th) GATE-Source Threshold Voltage (VGS=VDS, ID=250A) | 1 - 2.5 (Typ 1.5) | -1 - -2.5 (Typ -1.6) | V |
| RDS(ON) Drain-Source On Resistance (VGS=10V, ID=8A) | < 22 (Typ 17) | - | m |
| RDS(ON) Drain-Source On Resistance (VGS=-10V, ID=-6A) | - | < 53 (Typ 41) | m |
| Ciss Input Capacitance (f=1MHz) | 620 (VDS=20V) | 850 (VDS=-20V) | pF |
| Coss Output Capacitance (f=1MHz) | 65 (VDS=20V) | 85 (VDS=-20V) | pF |
| Crss Reverse Transfer Capacitance (f=1MHz) | 55 (VDS=20V) | 68 (VDS=-20V) | pF |
| Qg Gate Charge | 12 (VGS=8V, VDS=20V, ID=10A) | 13 (VGS=-10V, VDS=-20V, ID=-6A) | nC |
| Qgs Gate-Source Charge | 3.2 | 3.8 | nC |
| Qgd Gate-Drain Charge | 3.1 | 3.1 | nC |
| td(on) Turn-On Delay Time | 4 (VGS=10V, RL=2.5, RGEN=3) | 7.5 (VGS=-10V, VDD=-20V, RL=2.3, RGEN=6) | ns |
| tr Rise Time | 3 | 5.5 | ns |
| td(off) Turn-Off Delay Time | 15 | 19 | ns |
| tf Fall Time | 2 | 7 | ns |
| IS Continuous Drain to Source Diode | 8 | -6 | A |
| ISM Pulsed Drain to Source Diode | 32 | -24 | A |
| VSD Source-Drain Diode Forward Voltage (VGS=0V) | 1.2 (IS=8A) | -1.2 (IS=-6A) | V |
2307141056_JSMSEMI-AO4618-JSM_C7462819.pdf
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