Low RDS ON Power MOSFET 40V N Channel JSMSEMI JSM7240 ideal for computing and telecom power conversion
Key Attributes
Model Number:
JSM7240
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
40A
RDS(on):
5.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
73pF
Number:
1 N-channel
Output Capacitance(Coss):
680pF
Pd - Power Dissipation:
36.7W
Input Capacitance(Ciss):
2.2nF
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
JSM7240
Package:
DFN-8(4.9x5.8)
Product Description
Product Overview
The JSM7240 is a 40V N-Channel Enhancement Mode Power MOSFET featuring Trench Power MOS Technology. It offers low RDS(ON), low gate charge, and high current capability. This RoHS and Halogen-Free compliant MOSFET is suitable for DC/DC converters in computing, and isolated DC/DC converters in telecom and industrial applications.
Product Attributes
- Brand: JSM
- Technology: Trench Power MOS
- Certifications: RoHS and Halogen-Free Compliant
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Units |
| STATIC PARAMETERS | |||||
| Drain-Source Breakdown Voltage | ID=250A, VGS=0V | 40 | V | ||
| Zero Gate Voltage Drain Current | VDS=40V, VGS=0V | 1 | A | ||
| Gate-Body leakage current | VDS=0V, VGS= 20V | 100 | nA | ||
| Gate Threshold Voltage | VDS=5V, ID=250A | 1.4 | 1.9 | 2.4 | V |
| On state drain current | VGS=10V, VDS=5V | 144 | A | ||
| Static Drain-Source On-Resistance | VGS=10V, ID=20A | 4.2 | 5.5 | m | |
| Static Drain-Source On-Resistance | VGS=4.5V, ID=15A | 5.6 | 7 | m | |
| Forward Transconductance | VGS=10V, ID=20A | 67 | S | ||
| Diode Forward Voltage | IS=20A, VGS=0V | 0.7 | 1 | V | |
| Maximum Body-Diode Continuous Current | 40 | A | |||
| DYNAMIC PARAMETERS | |||||
| Input Capacitance | VGS=0V, VDS=20V, f=1MHz | 1460 | 2200 | pF | |
| Output Capacitance | VGS=0V, VDS=20V, f=1MHz | 365 | 680 | pF | |
| Reverse Transfer Capacitance | VGS=0V, VDS=20V, f=1MHz | 20 | 73 | pF | |
| Gate resistance | 0.4 | 1.2 | |||
| Total Gate Charge | VGS=10V, VDS=20V, ID=20A | 22 | 35 | nC | |
| Gate Source Charge | 3 | 5 | nC | ||
| Gate Drain Charge | 2 | 10 | nC | ||
| Turn-On DelayTime | VGS=10V, VDS=20V, RL=1, RGEN=3 | 7.2 | ns | ||
| Turn-On Rise Time | 3 | ns | |||
| Turn-Off DelayTime | 23 | ns | |||
| Turn-Off Fall Time | 3.5 | ns | |||
| Body Diode Reverse Recovery Time | IF=20A, dI/dt=500A/s | 11 | 21 | ns | |
| Body Diode Reverse Recovery Charge | IF=20A, dI/dt=500A/s | 28 | 52 | nC | |
| ABSOLUTE MAXIMUM RATINGS | |||||
| Drain-Source Voltage | 40 | V | |||
| Gate-Source Voltage | 20 | V | |||
| Continuous Drain Current | TC=25C | 40 | A | ||
| Pulsed Drain Current | t 10s | 144 | A | ||
| Avalanche Current | Steady-State | 40 | A | ||
| Avalanche energy | L=0.1mH | 75 | mJ | ||
| Power Dissipation | TA=25C | 3.1 | W | ||
| Power Dissipation | TC=25C | 72 | W | ||
| Power Dissipation (PDSM) | TA=25C, t 10s | 144 | W | ||
| THERMAL CHARACTERISTICS | |||||
| Maximum Junction-to-Case | 3.4 | C/W | |||
| Maximum Junction-to-Ambient | 75 | C/W | |||
| Junction and Storage Temperature Range | -55 | 150 | C | ||
2401051654_JSMSEMI-JSM7240_C2874730.pdf
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