Power management MOSFET JSMSEMI AON7534 JSM N Channel Enhancement Mode with reduced switching losses
Key Attributes
Model Number:
AON7534-JSM
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
44A
Operating Temperature -:
-
RDS(on):
8.7mΩ@4.5V,9A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
37pF
Number:
1 N-channel
Output Capacitance(Coss):
530pF
Pd - Power Dissipation:
100W
Input Capacitance(Ciss):
750pF
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
AON7534-JSM
Package:
DFN-8(3x3)
Product Description
AON7534 N-Channel Enhancement Mode MOSFET
The AON7534 is a high-performance N-Channel Enhancement Mode MOSFET designed for efficient power management. It offers a combination of low on-resistance (RDS(ON)) and reduced switching losses, making it ideal for applications requiring high-speed switching and minimal conduction losses. Its reliable and rugged construction, along with 100% UIS + Rg tested, ensures dependable operation. This device is available in lead-free and green (RoHS compliant) versions.
- Brand: JSMICRO Semiconductor
- Product Type: N-Channel Enhancement Mode MOSFET
- Certifications: Lead Free, Green Devices Available (RoHS Compliant)
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Common Ratings | |||||
| Drain-Source Voltage (VDSS) | 30 | V | |||
| Gate-Source Voltage (VGSS) | ±20 | V | |||
| Maximum Junction Temperature (TJ) | 150 | °C | |||
| Storage Temperature Range (TSTG) | -55 | 150 | °C | ||
| Absolute Maximum Ratings (TC=25°C Unless Otherwise Noted) | |||||
| Diode Continuous Forward Current (IS) | TC=25°C | 16 | A | ||
| Continuous Drain Current (ID) | TC=25°C | 44 | A | ||
| Continuous Drain Current (ID) | TC=100°C | 34 | A | ||
| Pulsed Drain Current (IDM) | TC=25°C | 100 | A | ||
| Maximum Power Dissipation (PD) | TC=25°C | 26.6 | W | ||
| Maximum Power Dissipation (PD) | TC=100°C | 10.6 | W | ||
| Thermal Resistance-Junction to Case (RθJC) | Steady State | 4.7 | °C/W | ||
| Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted) | |||||
| Continuous Drain Current (ID) | TA=25°C | 13.8 | A | ||
| Continuous Drain Current (ID) | TA=70°C | 11 | A | ||
| Pulsed Drain Current (IDM) | TA=25°C | 34 | A | ||
| Maximum Power Dissipation (PD) | TA=25°C | 1.73 | W | ||
| Maximum Power Dissipation (PD) | TA=70°C | 1.11 | W | ||
| Thermal Resistance-Junction to Ambient (RθJA) | t ≤10s | 40 | °C/W | ||
| Thermal Resistance-Junction to Ambient (RθJA) | Steady State | 72 | °C/W | ||
| Avalanche Current, Single pulse (IAS) | L=0.1mH | 20 | A | ||
| Avalanche Energy, Single pulse (EAS) | L=0.1mH | 20 | mJ | ||
| Electrical Characteristics (T = 25°C unless otherwise noted) | |||||
| Static Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250µA | 30 | V | ||
| Drain-Source Breakdown Voltage (transient) (BVDSSt) | VGS=0V, ID(aval)=20A Tcase=25°C, ttransient=100ns | 34 | V | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=24V, VGS=0V | 1 | µA | ||
| Zero Gate Voltage Drain Current (IDSS) | TJ=85°C | 30 | µA | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250µA | 1.4 | 1.7 | 2.5 | V |
| Gate Leakage Current (IGSS) | VGS=±20V, VDS=0V | ±100 | nA | ||
| Drain-Source On-state Resistance (RDS(ON)) | VGS=10V, IDS=12A | 4.5 | 5.5 | mΩ | |
| Drain-Source On-state Resistance (RDS(ON)) | TJ=125°C | 7.6 | mΩ | ||
| Drain-Source On-state Resistance (RDS(ON)) | VGS=4.5V, IDS=9A | 6.9 | 8.7 | mΩ | |
| Forward Transconductance (Gfs) | VDS=5V, IDS=10A | 16 | S | ||
| Diode Characteristics | |||||
| Diode Forward Voltage (VSD) | ISD=10A, VGS=0V | 0.8 | 1.1 | V | |
| Reverse Recovery Time (trr) | ISD=5A, dlSD/dt=100A/µs | 11 | ns | ||
| Charge Time (ta) | 14 | - | |||
| Discharge Time (tb) | 25 | - | |||
| Reverse Recovery Charge (Qrr) | 13 | nC | |||
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | 1.8 | 3 | Ω | |
| Input Capacitance (Ciss) | VGS=0V, VDS=15V, Frequency=1.0MHz | 750 | pF | ||
| Output Capacitance (Coss) | 530 | pF | |||
| Reverse Transfer Capacitance (Crss) | 37 | pF | |||
| Turn-on Delay Time (td( ON)) | VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=1Ω | 7.8 | ns | ||
| Turn-on Rise Time (tr) | 8.4 | ns | |||
| Turn-off Delay Time (td(OFF)) | 18 | ns | |||
| Turn-off Fall Time (tf) | 17 | ns | |||
| Gate Charge Characteristics | |||||
| Total Gate Charge (Qg) | VDS=15V, VGS=10V, IDS=12A | 12 | 18 | nC | |
| Total Gate Charge (Qg) | VDS=15V, VGS=4.5V, IDS=12A | 5.5 | nC | ||
| Threshold Gate Charge (Qgth) | 1.1 | - | |||
| Gate-Source Charge (Qgs) | 1.9 | - | |||
| Gate-Drain Charge (Qgd) | 2.2 | - | |||
Applications
The AON7534 is suitable for power management in notebook computers, portable equipment, and battery-powered systems.
2409302201_JSMSEMI-AON7534-JSM_C17701700.pdf
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