Low RDS ON N Channel MOSFET Featuring Trench Technology JSMSEMI JSM6764 for Computing and Industrial
Key Attributes
Model Number:
JSM6764
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
85A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.9V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
69pF
Number:
1 N-channel
Output Capacitance(Coss):
700pF
Pd - Power Dissipation:
42W
Input Capacitance(Ciss):
2.12nF
Gate Charge(Qg):
37nC@10V
Mfr. Part #:
JSM6764
Package:
DFN-8(5x6)
Product Description
Product Overview
The JSM6764 is a N-Channel Enhancement Mode Power MOSFET featuring Trench Power MOS Technology. It offers low RDS(ON), low gate charge, and high current capability, making it suitable for DC/DC converters in computing, telecom, and industrial applications. This device is 100% UIS Tested and 100% Rg Tested, and is RoHS and Halogen-Free compliant.
Product Attributes
- Brand: JSM
- Technology: Trench Power MOS
- Compliance: RoHS and Halogen-Free
- Testing: 100% UIS Tested, 100% Rg Tested
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Units |
| BVDSS | Drain-Source Breakdown Voltage | ID=10mA, VGS=0V | 30 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=VGS, ID=250A | 0.5 | uA | ||
| IGSS | Gate-Source Leakage Current | VDS=0V, VGS=12V | 100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS=5V, ID=250A | 1.1 | 1.5 | 1.9 | V |
| gFS | Forward Transconductance | VDS=15V, ID=20A | 167 | S | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V, ID=20A | 3.8 | 4.0 | m | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V, ID=20A | 4.5 | 5.0 | m | |
| VSD | Diode Forward Voltage | IS=20A, VGS=0V | 0.5 | 0.7 | V | |
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1MHz | 2120 | pF | ||
| Coss | Output Capacitance | VDS=15V, VGS=0V, f=1MHz | 700 | pF | ||
| Crss | Reverse Transfer Capacitance | VDS=15V, VGS=0V, f=1MHz | 69 | pF | ||
| Qg(10V) | Total Gate Charge | VGS=10V, VDS=15V, ID=20A | 37 | nC | ||
| Qg(4.5V) | Total Gate Charge | VGS=4.5V, VDS=15V, ID=20A | 16.8 | nC | ||
| Qgs | Gate Source Charge | VGS=10V, VDS=15V, ID=20A | 5 | nC | ||
| Qgd | Gate Drain Charge | VGS=10V, VDS=15V, ID=20A | 4.9 | nC | ||
| Rg | Gate Resistance | VGS=0V, f=1MHz | 0.9 | 2.7 | ||
| tr | Turn-On Rise Time | VGS=10V, ID=20A, RL=0.75, RGEN=3 | 3.5 | ns | ||
| tD(on) | Turn-On Delay Time | VGS=10V, ID=20A, RL=0.75, RGEN=3 | 7 | ns | ||
| tf | Turn-Off Fall Time | VGS=10V, ID=20A, RL=0.75, RGEN=3 | 6 | ns | ||
| tD(off) | Turn-Off Delay Time | VGS=10V, ID=20A, RL=0.75, RGEN=3 | 36 | ns | ||
| trr | Body Diode Reverse Recovery Time | IF=20A, dI/dt=500A/s | 15.5 | ns | ||
| Qrr | Body Diode Reverse Recovery Charge | IF=20A, dI/dt=500A/s | 33 | nC | ||
| ID | Continuous Drain Current | TC=25C | 85 | A | ||
| IDM | Pulsed Drain Current | TC=25C | 190 | A | ||
| IAS | Avalanche Current | Single pulse width limited by TJ(MAX)=150C | 42 | A | ||
| EAS | Avalanche energy | L=0.05mH | 44 | mJ | ||
| PD | Power Dissipation | TC=25C | 30 | W | ||
| PDSM | Power Dissipation | TA=25C, t 10s | 6.2 | W | ||
| RJC | Maximum Junction-to-Case | 3 | C/W | |||
| RJA | Maximum Junction-to-Ambient | 15 | 50 | C/W | ||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 12 | V | |||
| TJ, TSTG | Junction and Storage Temperature Range | -55 | 150 | C |
2401051654_JSMSEMI-JSM6764_C2874729.pdf
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