Power MOSFET JSMSEMI FDC5614P 60V P Channel Featuring Low On Resistance and Trench DMOS Technology
Key Attributes
Model Number:
FDC5614P
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3.3A
RDS(on):
96mΩ@10V,2A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
48pF@30V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.08nF@30V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
FDC5614P
Package:
SOT-23-6
Product Description
Product Overview
The FDC5614P is a 60V P-Channel enhancement mode power MOSFET utilizing advanced trench DMOS technology. This technology is optimized for low on-state resistance, superior switching performance, and high energy handling in avalanche and commutation modes. It is well-suited for high efficiency, fast switching applications.
Product Attributes
- Brand: JSMICRO Semiconductor
- Technology: Trench DMOS
- Certifications: Green Device Available
Technical Specifications
| Symbol | Parameter | Rating | Units | Typ. | Max. | Conditions |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current Continuous (TA=25) | -3.3 | A | |||
| ID | Drain Current Continuous (TA=70) | -2.6 | A | |||
| IDM | Drain Current Pulsed | -13.2 | A | Note 1 | ||
| EAS | Single Pulse Avalanche Energy | 25 | mJ | Note 2 | ||
| IAS | Single Pulse Avalanche Current | -18 | A | Note 2 | ||
| PD | Power Dissipation (TA=25) | 2 | W | |||
| PD | Power Dissipation Derate above 25 | 0.016 | W/ | |||
| TSTG | Storage Temperature Range | -55 to 150 | ||||
| TJ | Operating Junction Temperature Range | -55 to 150 | ||||
| Thermal Characteristics | ||||||
| RJA | Thermal Resistance Junction to ambient | /W | --- | 62.5 | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | -60 | V | VGS=0V , ID=-250uA | ||
| IDSS | Drain-Source Leakage Current | uA | --- | -1 | VDS=-60V , VGS=0V , TJ=25 | |
| IDSS | Drain-Source Leakage Current | uA | --- | -10 | VDS=-48V , VGS=0V , TJ=125 | |
| IGSS | Gate-Source Leakage Current | nA | --- | 100 | VGS=20V , VDS=0V | |
| On Characteristics | ||||||
| RDS(ON) | Static Drain-Source On-Resistance | m | 80 | 96 | VGS=-10V , ID=-2A | |
| RDS(ON) | Static Drain-Source On-Resistance | m | 100 | 130 | VGS=-4.5V , ID=-1A | |
| VGS(th) | Gate Threshold Voltage | V | -1.0 | -1.6 | VGS=VDS , ID=-250uA | |
| gfs | Forward Transconductance | S | 3 | VDS=-10V , ID=-1A | ||
| Dynamic and switching Characteristics | ||||||
| Qg | Total Gate Charge | nC | 10 | VDS=-30V , VGS=-10V , ID=-1A | ||
| Qgs | Gate-Source Charge | nC | 1.6 | |||
| Qgd | Gate-Drain Charge | nC | 3 | |||
| Td(on) | Turn-On Delay Time | ns | 8 | VDD=-30V , VGS=-10V , RG=6 , ID=-1A | ||
| Tr | Rise Time | ns | 15.4 | |||
| Td(off) | Turn-Off Delay Time | ns | 42.8 | |||
| Tf | Fall Time | ns | 8.4 | |||
| Ciss | Input Capacitance | pF | 720 | 1080 | VDS=-30V , VGS=0V , F=1MHz | |
| Coss | Output Capacitance | pF | 42 | 63 | ||
| Crss | Reverse Transfer Capacitance | pF | 32 | 48 | ||
| Rg | Gate resistance | 16 | ||||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Continuous Source Current | A | --- | -3.3 | ||
| ISM | Pulsed Source Current | A | --- | -6.6 | Note 1 | |
| VSD | Diode Forward Voltage | V | --- | -1.1 | IS=-1A , TJ=25 | |
| trr | Reverse Recovery Time | ns | --- | 30 | VR=-50V, IS=-1A di/dt=100A/s, TJ=25 | |
| Qrr | Reverse Recovery Charge | nC | --- | 15 | ||
2401051656_JSMSEMI-FDC5614P_C5156057.pdf
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