Dual transistor JTD JTDMMDT5401DW designed for medium power switching and amplification applications
Key Attributes
Model Number:
JTDMMDT5401DW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
2 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-
Mfr. Part #:
JTDMMDT5401DW
Package:
SOT-363
Product Description
Product Overview
The MMDT5401DW is a Dual Transistor (PNP+PNP) featuring Epitaxial Planar Die Construction. It is ideal for medium power amplification and switching applications. A complementary NPN type (MMDT5401DW) is also available.
Product Attributes
- Brand: JTD
- Origin: SHENZHEN JTD ELECTRONICS CO.,LTD
- Package: SOT-363
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=-100A , IE=0 | -160 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= -1mA , IB=0 | -150 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-120 V , IE=0 | -0.05 | A | ||
| Emitter cut-off current | IEBO | VEB=-3V , IC=0 | -0.05 | A | ||
| DC current gain | hFE(1) | VCE=-5 V, IC= -1mA | 50 | |||
| DC current gain | hFE(2) | VCE=-5 V, IC= -10mA | 100 | 300 | ||
| DC current gain | hFE(3) | VCE=-5 V, IC= -50mA | 50 | |||
| Collector-emitter saturation voltage | VCE(sat)1 | IC=-10 mA, IB=-1mA | -0.2 | V | ||
| Collector-emitter saturation voltage | VCE(sat)2 | IC=-50 mA, IB=-5mA | -0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat)1 | IC= -10 mA, IB=-1mA | -1 | V | ||
| Base-emitter saturation voltage | VBE(sat)2 | IC= -50 mA, IB=-5mA | -1 | V | ||
| Transition frequency | fT | VCE= -10V, IC= -10mA,f = 100MHz | 100 | MHz | ||
| Output Capacitance | Cob | VCB=-10V, IE= 0,f=1MHz | 6 | pF | ||
| Noise Figure | NF | VCE= -5.0V, IC= -200A, RS= 10,f = 1.0kHz | 8.0 | dB | ||
| Collector-Base Voltage | VCBO | -160 | V | |||
| Collector-Emitter Voltage | VCEO | -150 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current -Continuous | IC | -0.2 | A | |||
| Collector Power Dissipation | PC | 0.2 | W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 |
2504101957_JTD-JTDMMDT5401DW_C42443491.pdf
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