Small Surface Mount PNP Bipolar Junction Transistor JTD JTDS9015W with High DC Current Gain Features
Key Attributes
Model Number:
JTDS9015W
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
150MHz
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
JTDS9015W
Package:
SOT-323
Product Description
S9015W Transistor (PNP)
The S9015W is a PNP bipolar junction transistor (BJT) designed for small surface mount applications. It offers high DC current gain, making it suitable for various amplification and switching tasks in electronic circuits.
Product Attributes
- Brand: SHENZHEN JTD ELECTRONICS CO.,LTD
- Origin: China
- Package Type: SOT-323
- Marking: M6
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | ||||||
| Collector-Base Voltage | VCBO | (Ta=25 unless otherwise noted) | -50 | V | ||
| Collector-Emitter Voltage | VCEO | (Ta=25 unless otherwise noted) | -45 | V | ||
| Emitter-Base Voltage | VEBO | (Ta=25 unless otherwise noted) | -5 | V | ||
| Collector Current | IC | (Ta=25 unless otherwise noted) | -100 | mA | ||
| Collector Power Dissipation | PC | (Ta=25 unless otherwise noted) | 200 | mW | ||
| Thermal Resistance Junction To Ambient | RJA | (Ta=25 unless otherwise noted) | 625 | /W | ||
| Operation Junction and Storage Temperature Range | TJ,Tstg | (Ta=25 unless otherwise noted) | -55 | +150 | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100A, IE=0 | -50 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-100A, IB=0 | -45 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100A, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-50V, IE=0 | -100 | nA | ||
| Emitter cut-off current | IEBO | VEB=-5V, IC=0 | -100 | nA | ||
| DC current gain | hFE | VCE=-5V, IC=-1mA | 200 | 1000 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-100mA, IB=-10mA | -0.3 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-100mA, IB=-10mA | -1 | V | ||
| Base-emitter voltage | VBE | VCE=-5V, IC=-1mA | -0.6 | -0.75 | V | |
| Transition frequency | fT | VCE=-5V,IC=-10mA , f=30MHz | 150 | MHz | ||
| Collector output capacitance | Cob | VCB=-10V, IE=0, f=1MHz | 7 | pF | ||
2507081835_JTD-JTDS9015W_C49308265.pdf
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.