PNP Transistor JTD JTD5401 SOT89 3L Package Suitable for High Voltage Switching Applications
Key Attributes
Model Number:
JTD5401
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
300MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
JTD5401
Package:
SOT-89-3L
Product Description
Product Overview
PNP Transistor in SOT-89-3L package designed for switching and amplification in high voltage applications such as telephony. Features low current (max. 500mA) and high voltage (max. 160V).
Product Attributes
- Brand: JTD
- Origin: SHENZHEN
- Marking: 5401
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | -160 | V | |||
| Collector-Emitter Voltage | VCEO | -150 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current - Continuous | IC | -0.5 | A | |||
| Collector Power Dissipation | PC | 0.5 | W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | |||
| Thermal Resistance From Junction To Ambient | RJA | 250 | /W | |||
| Collector-base breakdown voltage | V(BR)CBO | IC= -100A, IE=0 | -160 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC = -1mA, IB=0 | -150 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE = -10A, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB = -120 V, IE=0 | -50 | nA | ||
| Emitter cut-off current | IEBO | VEB= -3V, IC=0 | -50 | nA | ||
| DC current gain | hFE(1) | VCE= -5V, IC=-1 mA | 50 | |||
| hFE(2) | VCE= -5V, IC= -10 mA | 100 | 300 | |||
| hFE(3) | VCE= -5V, IC=-50 mA | 50 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC= -10 mA, IB= -1 mA | -0.2 | V | ||
| VCE(sat) | IC= -50 mA, IB= -5 mA | -0.5 | V | |||
| Base-emitter saturation voltage | VBE(sat) | IC= -10 mA, IB= -1 mA | -1 | V | ||
| VBE(sat) | IC= -50 mA, IB= -5 mA | -1 | V | |||
| Transition frequency | f T | VCE= -10V, IC= -10mA, f = 100MHz | 100 | 300 | MHz | |
| Output Capacitance | Cob | VCB=-10V, IE= 0,f=1MHz | 6 | pF | ||
| Noise Figure | NF | VCE= -5.0V, IC= -200A, RS= 10,f =10Hz to15.7kHz | 8 | dB |
2504101957_JTD-JTD5401_C42443486.pdf
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