medium power NPN transistor JUXING MMBT5551 G1 ideal for switching and amplification in electronics

Key Attributes
Model Number: MMBT5551 G1
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT5551 G1
Package:
SOT-23
Product Description

MMBT5551 TRANSISTOR (NPN)

The MMBT5551 is an NPN transistor designed for medium power amplification and switching applications. It is complementary to the MMBT5401, offering a versatile solution for various electronic circuits.

Product Attributes

  • Marking: G1
  • Complementary to: MMBT5401

Technical Specifications

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-Base VoltageVCBO180V
Collector-Emitter VoltageVCEO160V
Emitter-Base VoltageVEBO6V
Collector CurrentIC600mA
Collector Power DissipationPC(Ta=25)300mW
Junction TemperatureTj150
Storage TemperatureTstg-55+150
Collector-base breakdown voltageV(BR)CBOIC=100A, IE=0180V
Collector-emitter breakdown voltageV(BR)CEOIC=1mA, IB=0160V
Emitter-base breakdown voltageV(BR)EBOIE=10A, IC=06V
Collector cut-off currentICBOVCB=120V, IE=050nA
Emitter cut-off currentIEBOVEB=4V, IC=050nA
DC current gainhFE(1)VCE=5V, IC=1mA80
hFE(2)VCE=5V, IC=10mA100300
hFE(3)VCE=5V, IC=50mA50
Collector-emitter saturation voltageVCE(sat)1IC=10mA, IB=1mA0.15V
VCE(sat)2IC=50mA, IB=5mA0.2V
Base-emitter saturation voltageVBE(sat)1IC=10mA, IB=1mA1V
VBE(sat)2IC=50mA, IB=5mA1V
Transition frequencyfTVCE=10V,IC=10mA, f=100MHz100300MHz
Collector output capacitanceCobVCB=10V, IE=0, f=1MHz6pF

2410121317_JUXING-MMBT5551-G1_C5365477.pdf

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