Power Switching N Channel Enhancement Mode MOSFET JUXING JX2060K 20V 60A Low On State Resistance
Key Attributes
Model Number:
JX2060K
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
4.7mΩ@4.5V,25A
Gate Threshold Voltage (Vgs(th)):
700mV
Reverse Transfer Capacitance (Crss@Vds):
252pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
2.007nF@10V
Pd - Power Dissipation:
37W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
JX2060K
Package:
TO-252
Product Description
Product Overview
The JX2060K is an N-Channel Enhancement Mode MOSFET featuring 20V MOSFET technology, low on-state resistance, and fast switching capabilities. It is designed for power switching and load switching applications, offering a maximum drain current of 60A and supporting Vgs up to 12V.
Product Attributes
- Brand: JX (implied from product part number)
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Part Number | Description | VDS Max | RDS(on) Typ. (@ VGS) | ID Max | Package |
| JX2060K | N-Channel Enhancement Mode MOSFET | 20V | 4.7m @ 4.5V 6.3m @ 2.5V | 60A | TO-252 |
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Drain to Source Breakdown Voltage | V(BR)DSS | ID = 250A, VGS = 0V | 20 | V | ||
| Zero-Gate Voltage Drain Current | IDSS | VDS = 20V, VGS = 0V | 1 | A | ||
| Gate to Source Leakage Current | IGSS | VGS = 12V, VDS = 0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 0.5 | 0.7 | 1.2 | V |
| Static Drain to Source On-State Resistance | RDS(on) | ID = 25A, VGS = 4.5V | 4.7 | 5.8 | m | |
| Static Drain to Source On-State Resistance | RDS(on) | ID = 15A, VGS =2.5V | 6.3 | 9.0 | m | |
| Input Capacitance | Ciss | VGS=0V, VDS=10V, Frequency=1.0MHz | 2007 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=10V, Frequency=1.0MHz | 278 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=10V, Frequency=1.0MHz | 252 | pF | ||
| Turn-ON Delay Time | td(on) | VDD = 10V, ID =20A, VGS = 4.5V, RG = 3 | 12 | ns | ||
| Rise Time | tr | VDD = 10V, ID =20A, VGS = 4.5V, RG = 3 | 33 | ns | ||
| Turn-OFF Delay Time | td(off) | VDD = 10V, ID =20A, VGS = 4.5V, RG = 3 | 48 | ns | ||
| Fall Time | tf | VDD = 10V, ID =20A, VGS = 4.5V, RG = 3 | 95 | ns | ||
| Total Gate Charge | Qg | VDS = 10V, VGS = 0 to 4.5V, ID = 20A | 23 | nC | ||
| Gate Source Charge | Qgs | VDS = 10V, VGS = 0 to 4.5V, ID = 20A | 4 | nC | ||
| Gate Drain Charge | Qgd | VDS = 10V, VGS = 0 to 4.5V, ID = 20A | 7 | nC | ||
| Diode Forward Voltage | VFSD | IS = 25A, VGS = 0V | 0.5 | 1.2 | V |
| Parameter | Symbol | Maximum | Units |
| Drain to Source Voltage | VDSS | 20 | V |
| Gate to Source Voltage | VGSS | 12 | V |
| Drain Current (DC) | ID | 60 | A |
| Drain Current (Pulse) | IDP | 240 | A |
| Total Dissipation | PD | 37 | W |
| Avalanche Energy, Single Pulsed | EAS | 144 | mJ |
| Junction Temperature | TJ | 150 | |
| Storage Temperature | Tstg | -55 to +150 |
| Parameter | Symbol | Value | Unit |
| Junction to Ambient Thermal Resistance | RJA | 32 | /W |
| Junction to Case Thermal Resistance | RJC | 3.4 | /W |
2410122015_JUXING-JX2060K_C19193791.pdf
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