P Channel Enhancement Mode MOSFET JUXING JX3401S3 for Power Management and Load Switching Applications
Key Attributes
Model Number:
JX3401S3
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
71mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
66pF
Number:
1 P-Channel
Output Capacitance(Coss):
104pF
Input Capacitance(Ciss):
880pF@15V
Pd - Power Dissipation:
1.7W
Gate Charge(Qg):
8.5nC@10V
Mfr. Part #:
JX3401S3
Package:
SOT-23-3
Product Description
JX3401S3 P-Channel Enhancement Mode MOSFET
The JX3401S3 is a P-Channel Enhancement Mode MOSFET featuring Advanced Trench Technology, suitable for power management and load switching applications. Its surface mount package design makes it ideal for compact electronic systems.
Product Attributes
- Brand: JX
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Drain to Source Breakdown Voltage | V(BR)DSS | ID = -250A, VGS = 0V | -30 | -33 | V | |
| Zero-Gate Voltage Drain Current | IDSS | VDS = -30V, VGS = 0V | -1 | A | ||
| Gate to Source Leakage Current | IGSS | VGS = 12V, VDS = 0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=-250A | -0.6 | -0.9 | -1.3 | V |
| Static Drain to Source On-State Resistance | RDS(on) | ID =-4A, VGS =-10V | 48 | 55 | m | |
| ID =-3A, VGS =-4.5V | 55 | 65 | m | |||
| ID =-1A, VGS = -2.5V | 71 | 85 | m | |||
| Input Capacitance | Ciss | VGS=0V, VDS=-15V, Frequency=1.0MHz | 880 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=-15V, Frequency=1.0MHz | 104 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=-15V, Frequency=1.0MHz | 66 | pF | ||
| Turn-ON Delay Time | td(on) | VDD =-15V, ID =-1A, RG = 2.5, VGS = -10V | 7 | ns | ||
| Rise Time | tr | VDD =-15V, ID =-1A, RG = 2.5, VGS = -10V | 3 | ns | ||
| Turn-OFF Delay Time | td(off) | VDD =-15V, ID =-1A, RG = 2.5, VGS = -10V | 20 | ns | ||
| Fall Time | tf | VDD =-15V, ID =-1A, RG = 2.5, VGS = -10V | 10 | ns | ||
| Total Gate Charge | Qg | VDS = -15V, VGS = -10V, ID = -4A | 8.5 | nC | ||
| Qgs | Qgs | VDS = -15V, VGS = -10V, ID = -4A | 2 | nC | ||
| Qgd | Qgd | VDS = -15V, VGS = -10V, ID = -4A | 2.5 | nC | ||
| Diode Forward Voltage | VFSD | IS = -4A, VGS = 0 | -1.2 | V |
| Parameter | Symbol | Maximum | Units |
| Drain to Source Voltage | VDSS | -30 | V |
| Gate to Source Voltage | VGSS | 12 | V |
| Drain Current (DC) | ID | -4 | A |
| Drain Current (Pulse), PW300s | IDP | -30 | A |
| Total Dissipation | PD | 1.7 | W |
| Junction Temperature | Tj | 150 | |
| Storage Temperature | Tstg | -55 to +150 |
| Parameter | Symbol | Value | Unit |
| Thermal Resistance, Junction-to-Ambient | RJA | 76.2 | /W |
2410122026_JUXING-JX3401S3_C19632404.pdf
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