N Channel Power MOSFET 5N50 with TO 252 Package and 125 Degree Celsius Junction Temperature

Key Attributes
Model Number: 5N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
5A
RDS(on):
1.36Ω@10V
Operating Temperature -:
-45℃~+125℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
48W
Mfr. Part #:
5N50
Package:
TO-252
Product Description

Product Overview

The 5N50 is an N-Channel Mode Power MOSFET designed for power switching applications. It offers excellent heat dissipation, high switching speed, and is 100% avalanche tested, making it suitable for demanding applications. The device features a TO-252 package for efficient thermal management.

Product Attributes

  • Product ID: 5N50
  • Package: TO-252
  • Mode: N-Channel
  • Type: Power MOSFET
  • Website: http://www.trr-jx.com

Technical Specifications

SymbolParameterTest ConditionsMinTypMaxUnit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
VDSDrain-Source Voltage500V
VGSGate-Source Voltage30V
IDContinuous Drain Current5.0A
IDMPulsed Drain Current16A
EASSingle Pulsed Avalanche Energy280mJ
PDPower Dissipation48W
TjJunction Temperature-45125
TstgStorage Temperature100
RJAThermal Resistance From Junction To Ambient/W
RJCThermal Resistance From Junction To Case2.6/W
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
V(BR)DSSDrain-Source Breakdown VoltageVGS=0V, ID=250A500V
VSDDrain-Source Diode Forward VoltageVGS=0V, IS=5.0A1.5V
IDSSZero Gate Voltage Drain CurrentVDS=500V, VGS=0V1A
IGSSGate-Body Leakage CurrentVDS=0V, VGS=30V100nA
VGS(th)Gate-Threshold VoltageVDS=VGS, ID=250A2.04.0V
RDS(on)Drain-Source On-ResistanceVGS=10V, ID=1.0A1.21.36

Ordering Information

Product IDPackageQty (pcs)
5N50TO-2522500

2409302301_JUXING-5N50_C22440674.pdf

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