N Channel Power MOSFET 5N50 with TO 252 Package and 125 Degree Celsius Junction Temperature
Product Overview
The 5N50 is an N-Channel Mode Power MOSFET designed for power switching applications. It offers excellent heat dissipation, high switching speed, and is 100% avalanche tested, making it suitable for demanding applications. The device features a TO-252 package for efficient thermal management.
Product Attributes
- Product ID: 5N50
- Package: TO-252
- Mode: N-Channel
- Type: Power MOSFET
- Website: http://www.trr-jx.com
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 500 | V | |||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Continuous Drain Current | 5.0 | A | |||
| IDM | Pulsed Drain Current | 16 | A | |||
| EAS | Single Pulsed Avalanche Energy | 280 | mJ | |||
| PD | Power Dissipation | 48 | W | |||
| Tj | Junction Temperature | -45 | 125 | |||
| Tstg | Storage Temperature | 100 | ||||
| RJA | Thermal Resistance From Junction To Ambient | /W | ||||
| RJC | Thermal Resistance From Junction To Case | 2.6 | /W | |||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 500 | V | ||
| VSD | Drain-Source Diode Forward Voltage | VGS=0V, IS=5.0A | 1.5 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=500V, VGS=0V | 1 | A | ||
| IGSS | Gate-Body Leakage Current | VDS=0V, VGS=30V | 100 | nA | ||
| VGS(th) | Gate-Threshold Voltage | VDS=VGS, ID=250A | 2.0 | 4.0 | V | |
| RDS(on) | Drain-Source On-Resistance | VGS=10V, ID=1.0A | 1.2 | 1.36 | ||
Ordering Information
| Product ID | Package | Qty (pcs) |
| 5N50 | TO-252 | 2500 |
2409302301_JUXING-5N50_C22440674.pdf
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