N Channel Enhancement Mode MOSFET with Low On Resistance KEXIN FDT86244 and 2.8A Continuous Current
Key Attributes
Model Number:
FDT86244
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
2.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
285mΩ@10V,2.8A
Gate Threshold Voltage (Vgs(th)):
3.1V
Reverse Transfer Capacitance (Crss@Vds):
5pF@75V
Number:
1 N-channel
Input Capacitance(Ciss):
395pF@75V
Pd - Power Dissipation:
-
Gate Charge(Qg):
-
Mfr. Part #:
FDT86244
Package:
SOT-223
Product Description
Product Overview
The FDT86244 is a high-performance N-Channel Enhancement Mode MOSFET designed for various electronic applications. It features a high drain-source voltage of 150V and a continuous drain current of 2.8A, with low on-resistance characteristics.
Product Attributes
- Brand: Kexin
- SMD Type: SOT-223
- Function: MOSFET N-Channel Enhancement Mode
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=250A, VGS=0V | 150 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=120V, VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 2.0 | 3.1 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(On) | VGS=10V, ID=2.8A | 285 | m | ||
| VGS=6V, ID=2.4A | 305 | m | ||||
| Forward Transconductance | gFS | VDS=10V, ID=2.8A | 4 | S | ||
| Capacitance | Ciss | VGS=0V, VDS=75V, f=1MHz | 295 | 395 | pF | |
| Coss | VGS=0V, VDS=75V, f=1MHz | 33 | 45 | pF | ||
| Crss | VGS=0V, VDS=75V, f=1MHz | 2.4 | 5 | pF | ||
| Gate Charge | Qgs | VGS=0 to 10V, VDS=75V, ID=2.8A | 4.9 | 7 | nC | |
| Qgd | VGS=0 to 5V, VDS=75V, ID=2.8A | 2.8 | 4 | nC | ||
| Body Diode Characteristics | IS | Maximum Body-Diode Continuous Current | 2.8 | A | ||
| VSD | IS=2.8A,VGS=0V | 0.82 | 1.3 | V |
2410121525_KEXIN-FDT86244_C489347.pdf
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