Power Control MOSFET KEXIN KI2309DS Featuring High Voltage 60V and Continuous Drain Current of 1.25A
Key Attributes
Model Number:
KI2309DS
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
1.25A
RDS(on):
275mΩ@10V;550mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
5.4nC@10V
Mfr. Part #:
KI2309DS
Package:
SOT-23-3
Product Description
Product Overview
The SI2309DS (KI2309DS) is a P-Channel Enhancement MOSFET designed for various electronic applications. It offers key features like a high drain-source voltage of -60V and a continuous drain current of -1.25A at 25C. This MOSFET is suitable for applications requiring efficient switching and power control.
Product Attributes
- Brand: Kexin
- SMD Type: SI2309DS (KI2309DS)
- Origin: www.kexin.com.cn
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | Ta = 25°C *1,*2 | -1.25 | A | ||
| Continuous Drain Current | ID | Ta = 70°C *1,*2 | -0.85 | A | ||
| Pulsed Drain Current | IDM | -8 | A | |||
| Avalanche Current | IAS | L=0.1mH | -5 | A | ||
| Power Dissipation | PD | Ta = 25°C *1,*2 | 1.25 | W | ||
| Power Dissipation | PD | Ta = 70°C *1,*2 | 0.8 | W | ||
| Thermal Resistance, Junction-to-Ambient | RthJA | Steady State *1 | 166 | °C/W | ||
| Thermal Resistance, Junction-to-Case | RthJC | *1 | 60 | °C/W | ||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | VDSS | ID=-250µA, VGS=0V | -60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V, VGS=0V | -1 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-48V, VGS=0V, TJ=125°C | -50 | µA | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250µA | -1 | - | -3 | V |
| Static Drain-Source On-Resistance | RDS(On) | VGS=-10V, ID=-1.25A *1 | 275 | 340 | mΩ | |
| Static Drain-Source On-Resistance | RDS(On) | VGS=-4.5V, ID=-1A *1 | 406 | 550 | mΩ | |
| On state drain current | ID(ON) | VGS=-4.5V, VDS=-10V *1 | -6 | A | ||
| Forward Transconductance | gFS | VDS=-4.5V, ID=-1A *1 | 1.9 | S | ||
| Total Gate Charge | Qg | VGS=-4.5V, VDS=-30V, ID=-1A | 5.4 | 12 | nC | |
| Gate Source Charge | Qgs | 1.15 | nC | |||
| Gate Drain Charge | Qgd | 0.92 | nC | |||
| Turn-On DelayTime | td(on) | VGS=-4.5V, VDS=-30V, RL=30Ω,RGEN=6Ω | 10.5 | 20 | ns | |
| Turn-On Rise Time | tr | 11.5 | 20 | ns | ||
| Turn-Off DelayTime | td(off) | 15.5 | 30 | ns | ||
| Turn-Off Fall Time | tf | 7.5 | 15 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF=-1.25A, dI/dt=100A/µs | 30 | 55 | ns | |
| Maximum Body-Diode Continuous Current | IS | -1.25 | A | |||
| Diode Forward Voltage | VSD | IS=-1.25A,VGS=0V | -0.82 | -1.2 | V | |
2508261745_KEXIN-KI2309DS_C489367.pdf
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