Low On Resistance N Channel MOSFET KEXIN 2N7002K Fast Switching Speed and Low Gate Threshold Voltage
Key Attributes
Model Number:
2N7002K
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2Ω@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
800pC@4.5V
Mfr. Part #:
2N7002K
Package:
SOT-23
Product Description
Product Overview
The 2N7002K is an N-Channel Enhancement MOSFET featuring ESD protection up to 2KV HBM. It offers low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage. This SMD type MOSFET is suitable for various electronic applications.
Product Attributes
- Brand: Kexin
- Origin: China (implied by www.kexin.com.cn)
- Type: SMD Type MOSFET
- Package: SOT-23
- Marking: K72
- Features: ESD Protected 2KV HBM, Low On-Resistance, Low Gate Threshold Voltage, Low Input Capacitance, Fast Switching Speed, Low Input/Output Leakage
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=100A, VGS=0V | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=20V | 10 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=10V, ID=500mA | 1 | 1.6 | 2.5 | V |
| Forward Transfer Admittance | |Yfs| | VGS=10V, ID=200mA | 80 | mS | ||
| Input Capacitance | Ciss | VGS=0V, VDS=25V, f=1MHz | 50 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=25V, f=1MHz | 25 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, f=1MHz | 5 | pF | ||
| Total Gate Charge | Qg | VGS=4.5V, VDS=15V, ID=200mA | 0.8 | nC | ||
| Turn-On Delay Time | td(on) | VDS=10V, ID=1mA, RG=10,VGEN=10V,RL=150 | 20 | ns | ||
| Turn-Off Delay Time | td(off) | VDS=10V, ID=1mA, RG=10,VGEN=10V,RL=150 | 40 | ns | ||
| Static Drain-Source On-Resistance | RDS(On) | VGS=10V, ID=50mA | 3 | |||
| Static Drain-Source On-Resistance | RDS(On) | VGS=10V, ID=500mA | 2 | |||
| Drain Current -Continuous | ID | Note:1 | 300 | mA | ||
| Drain Current -Pulsed | ID | Note:1 | 800 | mA | ||
| Power Dissipation | PD | Note 1, Device mounted on FR-4 PCB | 350 | mW | ||
| Junction Temperature | TJ | 150 | C | |||
| Junction and Storage Temperature Range | Tstg | -55 | 150 | C | ||
| Thermal Resistance.Junction- to-Ambient | RthJA | Device mounted on FR-4 PCB | 357 | C/W |
2410010130_KEXIN-2N7002K_C382335.pdf
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