Low On Resistance P Channel MOSFET KEXIN KI005PDFN for Effective Power Management and Switching Needs
Key Attributes
Model Number:
KI005PDFN
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Number:
1 P-Channel
Pd - Power Dissipation:
1.4W
Mfr. Part #:
KI005PDFN
Package:
DFN-6L(2x2)
Product Description
Product Overview
This P-Channel MOSFET is designed for various applications requiring efficient switching and power management. It features a low on-resistance and robust performance characteristics.
Product Attributes
- SMD Type
- Brand: Kexin
- Origin: www.kexin.com.cn
- Marking: 05P
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=-250A, VGS=0V | -12 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-12V, VGS=0V | -1 | uA | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=12V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS ID=-250A | -0.45 | -1 | V | |
| Static Drain-Source On-Resistance | RDS(On) | VGS=-4.5V, ID=-4.1A | 45 | m | ||
| Static Drain-Source On-Resistance | RDS(On) | VGS=-2.5V, ID=-3A | 60 | m | ||
| Diode Forward Voltage | VSD | IS=-1A,VGS=0V | -1.2 | V |
| Parameter | Symbol | Rating | Unit |
| Drain-Source Voltage | VDS | -12 | V |
| Gate-Source Voltage | VGS | 12 | |
| Continuous Drain Current | ID | -4.1 | A |
| Power Dissipation | PD | 1.4 | W |
| Junction Temperature | TJ | 150 | |
| Junction Storage Temperature Range | Tstg | -55 to 150 |
2410121740_KEXIN-KI005PDFN_C382340.pdf
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