Power Switching N Channel MOSFET KEXIN SI2302 with 20V Drain Source Voltage and control performance
Key Attributes
Model Number:
SI2302
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
85mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
300pF@10V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
SI2302
Package:
SOT-23
Product Description
N-Channel Enhancement MOSFET SI2302 (KI2302)
The SI2302 (KI2302) is an N-Channel Enhancement MOSFET designed for various applications. It features a Drain-Source Voltage (VDS) of 20V and low On-Resistance (RDS(on)) at different Gate-Source Voltages (VGS), making it suitable for power switching and control circuits.
Product Attributes
- Brand: Kexin
- SMD Type: SOT-23-3
- Origin: www.kexin.com.cn
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=250A, VGS=0V | 20 | V | ||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=8V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.6 | 1.0 | V | |
| Static Drain-Source On-Resistance | RDS(On) | VGS=4.5V, ID=3.6A | 45 | 85 | m | |
| Static Drain-Source On-Resistance | RDS(On) | VGS=2.5V, ID=3.1A | 70 | 115 | m | |
| Forward Transconductance | gfs | VDS=5V,ID=3.6A | 8 | S | ||
| Input Capacitance | Ciss | VDS=10V, VGS=4.5V, ID=3.6A | 300 | pF | ||
| Output Capacitance | Coss | VDS=10V, VGS=4.5V, ID=3.6A | 120 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=10V, VGS=4.5V, ID=3.6A | 80 | pF | ||
| Total Gate Charge | Qg | VDS=10V, ID=3.6A | 4 | 10 | nC | |
| Gate-Source Charge | Qgs | VDS=10V, ID=3.6A | 0.65 | nC | ||
| Gate-Drain Charge | Qg d | VDS=10V, ID=3.6A | 1.5 | nC | ||
| Turn-On Delay Time | td(on) | VDS=10V, VGS=4.5V, ID=3.6A, RL=5.5,RGEN=6 | 7 | 15 | ns | |
| Turn-On Rise Time | tr | VDS=10V, VGS=4.5V, ID=3.6A, RL=5.5,RGEN=6 | 55 | 80 | ns | |
| Turn-Off Delay Time | td(off) | VDS=10V, VGS=4.5V, ID=3.6A, RL=5.5,RGEN=6 | 16 | 60 | ns | |
| Turn-Off Fall Time | tf | VDS=10V, VGS=4.5V, ID=3.6A, RL=5.5,RGEN=6 | 10 | 25 | ns | |
| Continuous Source Current (Diode Conduction) | IS | 1.6 | A | |||
| Diode Forward Voltage | VSD | Is=1.6 A,VGS=0V | 0.76 | 1.2 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V ,TJ=55 | 10 | A | ||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=8V | 100 | nA | ||
| Continuous Drain Current | ID | Ta=25 | 2.8 | A | ||
| Continuous Drain Current | ID | Ta=70 | 2.2 | A | ||
| Pulsed Drain Current | IDM | Ta=25 | 10 | A | ||
| Power Dissipation | PD | Ta=25 | 1.25 | W | ||
| Power Dissipation | PD | Ta=70 | 0.8 | W | ||
| Thermal Resistance.Junction- to-Ambient | RthJA | *1 | 100 | /W | ||
| Thermal Resistance.Junction- to-Ambient | RthJA | *2 | 166 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | to | 150 |
2410010130_KEXIN-SI2302_C382300.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
