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quality Electrical Power Control Device KEXIN BT169 SCR Thyristor with 0.5A Average On State Current factory
quality Electrical Power Control Device KEXIN BT169 SCR Thyristor with 0.5A Average On State Current factory

Electrical Power Control Device KEXIN BT169 SCR Thyristor with 0.5A Average On State Current

Key Attributes
Model Number: BT169
Product Custom Attributes
Holding Current (Ih):
5mA
Current - Gate Trigger(Igt):
200uA
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
100mW
Current - On State(It(RMS)):
800mA
Peak Off - State Voltage(Vdrm):
400V
Current - Surge(Itsm@f):
9A
SCR Type:
1 SCR
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
BT169
Package:
SOT-89
Product Description

Product Overview

The BT169 (KT169) is an SCR Thyristor designed for various electronic applications. It features repetitive peak off-state voltages up to 400V, an average on-state current of 0.5A, and an RMS on-state current of 0.8A. This device is suitable for applications requiring reliable switching and control of electrical power.

Product Attributes

  • Brand: Kexin
  • SMD Type: Yes
  • Origin: China (implied by www.kexin.com.cn)

Technical Specifications

ParameterSymbolBT169-400UnitTest Conditions
Repetitive peak off-state voltagesVDRM, VRRM400VIDRM=IRRM50uA
Average on-state currentIT(AV)0.5A
RMS on-state currentIT(RMS)0.8A
Non-Repetitive peak on-state current (t=10ms)ITSM8A
Non-Repetitive peak on-state current (t=8.3ms)ITSM9A
Repetitive Rate of rise of on-state Current after TriggeringdIT/dt50A/us
Circuit Fusing Considerations (t = 10ms)I2t0.32A2s
Peak Gate CurrentIGM1A
Peak Gate VoltageVGM5V
Peak Gate Voltage (Reverse)VGRM5V
Peak Gate PowerPGM2W
Average Gate PowerPGF(AV)0.1W
Forward Thermal Resistance Junction to AmbientRthJA150K/W
Thermal Resistance Junction to CaseRthJC60K/W
Junction TemperatureTJ125C
Storage Temperature RangeTstg-40 to 150C
Off-state Leakage CurrentID,IR0.1mAVDRM=VRRM(max);Tj=125; RGK=1k
On-state VoltageVTM1.5VIT=1A
Gate Trigger Current (Continuous dc)IGT200uAVD=12V, IT=10mA
Latching CurrentIL6mAVD=12V, IGT=0.5mA; RGK=1k
Holding CurrentIH5mAVD=12V, IGT=0.5mA; RGK=1k
Critical Rate of rise of off-state VoltagedVD/dt25V/usVDM=67% VDRM(max); Tj=125 exponential waveform; RGK=1k
Gate Controlled turn-on timetgt2usITM=2A; VD=VDRM(max),G=10mA; dIG/dt=0.1A/us
Circuit Commutated turn-off timetq100usVD=67% VDRM(max); Tj=125, TM=1.6A; VR=35V; dITM/dt=30A/us,dVD/dt=2V/us; RGK=1k
Gate Trigger VoltageVGT0.8VVD=12V, IT=10mA

2410121944_KEXIN-BT169_C489341.pdf

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