Lead Free Surface Mount Rectifier JUXING ES3KB With Superfast Recovery And Low Profile Package Design
Key Attributes
Model Number:
ES3KB
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100A
Reverse Leakage Current (Ir):
5uA
Reverse Recovery Time (trr):
35ns
Voltage - DC Reverse (Vr) (Max):
800V
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1.85V@3A
Current - Rectified:
3A
Mfr. Part #:
ES3KB
Package:
SMB
Product Description
Product Overview
The ES3KB Surface Mount Superfast Rectifier is designed for surface-mounted applications. It features a low profile package, glass-passivated chip junction, and a superfast reverse recovery time. This product is lead-free and complies with EU RoHS 2011/65/EU directives, making it suitable for environmentally conscious applications.
Product Attributes
- Brand: TRR-JX
- Certifications: EU RoHS 2011/65/EU
- Material: Glass Passivated Chip Junction
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | ES3KB | Units | Notes |
| Maximum DC Blocking Voltage | VRRM | 800 | V | |
| Maximum RMS voltage | VRMS | 560 | V | |
| Maximum Average Forward Rectified Current at T = 125 °C | IF(AV) | 3 | A | Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. |
| Peak Forward Surge Current 8.3 ms Single Half Sine Wave | IFSM | 100 | A | Superimposed on Rated Load |
| Maximum Forward Voltage at 3 A | VF | 1.85 | V | Measured with I = 0.5 A, I = 1 A, I = 0.25 A (1) |
| Maximum Reverse Recovery Time | trr | 35 | ns | (2) |
| Maximum DC Reverse Current at Rated DC Blocking Voltage | IR | 100 | μA | T = 25 °C / T =125 °C |
| Typical Junction Capacitance at V =4V, f=1MHz | Cj | 20 | pF | T = 25 °C |
| Operating and Storage Temperature Range | T , T j stg | -55 ~ +150 | °C | |
| Typical Thermal Resistance (P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas) | RθJA | 60 | °C/W | |
| Typical Thermal Resistance | RθJC | 20 | °C/W |
2411220025_JUXING-ES3KB_C41368179.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
