Low Gate Charge N CHANNEL MOSFET KIA Semicon Tech KCP2915B 130A 150V with 100 Percent EAS Guarantee
Key Attributes
Model Number:
KCP2915B
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
130A
RDS(on):
7.3mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
9.5pF@75V
Number:
1 N-channel
Pd - Power Dissipation:
178W
Input Capacitance(Ciss):
5.75nF@75V
Gate Charge(Qg):
110nC@10V
Mfr. Part #:
KCP2915B
Package:
TO-220
Product Description
Product Overview
This 130A, 150V N-CHANNEL MOSFET utilizes SGT MOSFET technology with an advanced Trench MOS structure. It offers low gate charge and low RDS(ON), with 100% EAS guaranteed. This device is available in a Green Device option and is suitable for applications such as Load Switches, LED applications, Networking, and Quick Chargers.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KCP2915B
- Package: TO-220
- Origin: KIA
- Certifications: Green Device Available
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 150 | - | - | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | - | 7.3 | 9 | m |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 2 | 3 | 4 | V |
| Drain-Source Leakage Current | IDSS | VDS=120V,VGS=0V,TJ=25C | - | - | 1 | uA |
| Drain-Source Leakage Current | IDSS | VDS=120V,VGS=0V,TJ=55C | - | - | 5 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Resistance | Rg | VDS=0V, VGS=0V,f=1MHz | - | 1.9 | - | |
| Total Gate Charge | Qg | VDS=75V, VGS=10V , ID=20A | - | 110 | - | nC |
| Gate-Source Charge | Qgs | - | 25.9 | - | nC | |
| Gate-Drain Charge | Qgd | - | 31.8 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=30V,VGS=10V, RG=3.3,ID=1A | - | 33 | - | ns |
| Rise Time | Tr | - | 26 | - | ns | |
| Turn-Off DelayTime | Td(off) | - | 98 | - | ns | |
| Fall Time | Tf | - | 90 | - | ns | |
| Input Capacitance | Ciss | VDS=75V , VGS=0V , f=1MHz | - | 5750 | - | pF |
| Output Capacitance | Coss | - | 414 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 9.5 | - | pF | |
| Continuous Source Current | IS | VG=VD=0V, Force Current | - | - | 130 | A |
| Diode Forward Voltage | VSD | VGS=0V, IS=1A , TJ=25C | - | - | 1.2 | V |
| Continuous Drain Current | ID | TC=25C | - | - | 130 | A |
| Continuous Drain Current | ID | TC=100C | - | - | 80 | A |
| Pulsed Drain Current | IDM | - | - | 450 | A | |
| Avalanche Energy | EAS | - | 784 | - | mJ | |
| Avalanche Current | IAS | - | 56 | - | A | |
| Total Power Dissipation | PD | - | - | 178 | W | |
| Operation Junction Temperature Range | TJ | -55 | - | 150 | C | |
| Storage Temperature Range | TSTG | -55 | - | 150 | C | |
| Thermal Resistance, Junction-to-Ambient | RJA | - | - | 50 | C/W | |
| Thermal Resistance, Junction-to-Case | RJC | - | - | 0.7 | C/W |
2410121317_KIA-Semicon-Tech-KCP2915B_C5156071.pdf
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