Low RDSon N Channel MOSFET KIA Semicon Tech KCY3008A 85V for DC DC Converters and Motor Drive Applications
Key Attributes
Model Number:
KCY3008A
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
-
Output Capacitance(Coss):
545pF
Input Capacitance(Ciss):
4.03nF
Pd - Power Dissipation:
90W
Gate Charge(Qg):
65nC@10V
Mfr. Part #:
KCY3008A
Package:
DFN-8(5x6)
Product Description
Product Overview
The KCX3008A is an 85V N-CHANNEL MOSFET from KIA SEMICONDUCTORS, featuring advanced SGT technology for extremely low RDS(on) of 4.5 m at Vgs=10V. This MOSFET offers an excellent Gate Charge x RDS(on) product (FOM) and is suitable for applications such as Motor Drives, SR (Synchronous Rectification), DC/DC Converters, and general-purpose applications.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Part Number | Package | Drain-to-Source Voltage (VDSS) | Continuous Drain Current (ID) @ TC=25 C (Silicon limited) | Pulsed Drain Current (IDP) @ TC = 25C | Avalanche Energy (EAS) @ L=0.5mH, Rg=25 | Gate-Source Voltage (VGS) | Power Dissipation (Ptot) @ TC = 25 C | Junction & Storage Temperature Range (TJ& TSTG) | Thermal Resistance (RJA) | Thermal Resistance (RJC) | Drain-Source Breakdown Voltage (BVDSS) @ VGS=0V,ID=250A | Zero Gate Voltage Drain Current (IDSS) @ VDS=85V , VGS=0V, Tj=25 C | Gate Threshold Voltage (VGS(th)) @ VDS=VGS, ID=250A ,Tj=25 C | Gate Leakage Current (IGSS) @ VGS=20V,VDS=0V | Drain-Source On-Resistance (RDS(on)) @ VGS=10V,ID=50A, Tj=25 C | Transconductance (gfs) @ VDS=5V,ID=50A | Gate Resistance (RG) @ VGS=0V,VDS=0V F=1MHz | Input Capacitance (Ciss) @ VDS=40V,VGS=0V, F=1MHz | Output Capacitance (Coss) | Reverse Transfer Capacitance (Crss) | Turn-on Delay Time (td(on)) @ VDS=40V,Tj=25 C, VGS=10V,RL=3 | Rise Time (tr) | Turn-off Delay Time (td(off)) | Fall Time (tf) | Total Gate Charge (Qg) @ VDS=40V,ID=25A, VGS=10V, F=1MHz | Gate-Source Charge (Qgs) | Gate-Drain Charge (Qgd) | Diode Forward Voltage (VSD) @ VGS=0V,ISD=50A | Reverse Recovery Time (trr) @ IF=20A DlF/dt=500A/s | Reverse Recovery Charge (Qrr) |
| KCX3008A (TO-263) | TO-263 | 85 V | 160 A | 480 A | 560 mJ | 20 V | 220 W | -55 to 175 C | 60 C/W | 0.68 C/W | 85 - 90 V | - - 1 A | 2.0 3.0 4.0 V | - - 100 nA | - 4.5 5.5 m | - 80 - S | - 1.5 - | - 4030 - pF | - 545 - pF | - 35 - pF | - 20 - ns | - 38 - ns | - 45 - ns | - 20 - ns | - 65 - nC | - 25 - nC | - 14 - nC | - 0.85 1.4 V | - 60 - ns | - 340 - nC |
| KCY3008A (DFN5*6) | DFN5*6 | 85 V | 100 A | 480 A | 560 mJ | 20 V | 90 W | -55 to 175 C | 60 C/W | 1.76 C/W | 85 - 90 V | - - 1 A | 2.0 3.0 4.0 V | - - 100 nA | - 4.5 5.5 m | - 80 - S | - 1.5 - | - 4030 - pF | - 545 - pF | - 35 - pF | - 20 - ns | - 38 - ns | - 45 - ns | - 20 - ns | - 65 - nC | - 25 - nC | - 14 - nC | - 0.85 1.4 V | - 60 - ns | - 340 - nC |
2411121100_KIA-Semicon-Tech-KCY3008A_C2839421.pdf
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