High reliability MOSFET KIA Semicon Tech KND3404C with 100 percent EAS guarantee and RoHS compliance

Key Attributes
Model Number: KND3404C
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
80A
RDS(on):
6.5mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
200pF
Number:
1 N-channel
Output Capacitance(Coss):
270pF
Input Capacitance(Ciss):
3.33nF
Pd - Power Dissipation:
52.1W
Gate Charge(Qg):
28nC@4.5V
Mfr. Part #:
KND3404C
Package:
TO-252
Product Description

Product Overview

The KND3404C is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, ensuring efficient power conversion. This device is RoHS and Green Product compliant, with 100% EAS guaranteed and full functional reliability approval.

Product Attributes

  • Brand: KIA SEMICONDUCTORS
  • Product Name: KNX3404C
  • Certifications: RoHS, Green Product
  • EAS Guaranteed: 100%

Technical Specifications

Parameter Symbol Conditions TO-252 (Typ.) DFN5*6 (Typ.) Unit
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 40 40 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=15A 5.0 -- m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=12A -- 6.5 m
Gate Threshold Voltage VGS(th) VGS=VDS , ID=250uA 1.0 - 2.5 1.0 - 2.5 V
Continuous drain current ID VGS@10V, TC=25C 80 80 A
Continuous drain current ID VGS@10V, TC=100C 58 58 A
Pulsed drain current IDM -- 150 150 A
Single pulse avalanche energy EAS -- 110 110 mJ
Total power dissipation PD Tc=25C 52.1 52.1 W
Total Gate Charge (4.5V) Qg VDS=20V , VGS=4.5V , ID=12A 28 28 nC
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz 3330 3330 pF
Output Capacitance Coss -- 270 270 pF
Reverse Transfer Capacitance Crss -- 200 200 pF

2411121112_KIA-Semicon-Tech-KND3404C_C455981.pdf
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